JPS6457678A - Manufacture of field-effect transistor - Google Patents
Manufacture of field-effect transistorInfo
- Publication number
- JPS6457678A JPS6457678A JP21287287A JP21287287A JPS6457678A JP S6457678 A JPS6457678 A JP S6457678A JP 21287287 A JP21287287 A JP 21287287A JP 21287287 A JP21287287 A JP 21287287A JP S6457678 A JPS6457678 A JP S6457678A
- Authority
- JP
- Japan
- Prior art keywords
- opening
- insulating layer
- etched away
- semiconductor substrate
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To form a FET easily controlling the width of cavity requiring no alignment with high precision by a method wherein an insulating layer is etched away to make an opening and further etched away to extend the opening in the leteral direction so that a semiconductor substrate exposed to the opening may be etched away to make a cavity and so forth. CONSTITUTION:The first insulating layer 11 is formed on the main surface of semiconductor substrates 101, 102; a photoresist layer 12 is laminatedly coated on the first insulating layer 11; and an opening part 12a is formed adjacently to the region where a gate electrode is to be formed. First, the first insulating layer 11 exposed to said opening 12a is etched away to make another opening 11a reaching the semiconductor substrate 102 and then the opening 11a is further etched away to be extended along the main surface of the semiconductor substrate 102. Second, the semiconductor substrate 102 exposed to said opening 11a is etched away to make a cavity 13 and then the second insulating layer 14 is formed on a part of the semiconductor substrate 102 in the cavity 13 by lift-off process. Finally, a gate electrode 103G is formed in a gap 15 near a source electrode out of the gaps between the first insulating layer 11 and the second insulating layer 14.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21287287A JPS6457678A (en) | 1987-08-28 | 1987-08-28 | Manufacture of field-effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21287287A JPS6457678A (en) | 1987-08-28 | 1987-08-28 | Manufacture of field-effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6457678A true JPS6457678A (en) | 1989-03-03 |
Family
ID=16629670
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21287287A Pending JPS6457678A (en) | 1987-08-28 | 1987-08-28 | Manufacture of field-effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6457678A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020250041A1 (en) * | 2019-06-10 | 2020-12-17 | 株式会社ティラド | Heat exchanger |
-
1987
- 1987-08-28 JP JP21287287A patent/JPS6457678A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020250041A1 (en) * | 2019-06-10 | 2020-12-17 | 株式会社ティラド | Heat exchanger |
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