JPS6450581A - Manufacture of thin film superconducting element - Google Patents
Manufacture of thin film superconducting elementInfo
- Publication number
- JPS6450581A JPS6450581A JP62208652A JP20865287A JPS6450581A JP S6450581 A JPS6450581 A JP S6450581A JP 62208652 A JP62208652 A JP 62208652A JP 20865287 A JP20865287 A JP 20865287A JP S6450581 A JPS6450581 A JP S6450581A
- Authority
- JP
- Japan
- Prior art keywords
- film
- bonded part
- ions
- weekly
- weekly bonded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010408 film Substances 0.000 abstract 7
- 230000003442 weekly effect Effects 0.000 abstract 5
- -1 hydrogen ions Chemical class 0.000 abstract 4
- 239000001257 hydrogen Substances 0.000 abstract 3
- 229910052739 hydrogen Inorganic materials 0.000 abstract 3
- 150000002500 ions Chemical class 0.000 abstract 3
- 239000002887 superconductor Substances 0.000 abstract 3
- 239000002131 composite material Substances 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 239000011261 inert gas Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 238000001755 magnetron sputter deposition Methods 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
- H10N60/124—Josephson-effect devices comprising high-Tc ceramic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0884—Treatment of superconductor layers by irradiation, e.g. ion-beam, electron-beam, laser beam or X-rays
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
PURPOSE:To enable a thin film superconducting element having weekly bonded part with high precision to be manufactured easily by a method wherein a superconductor film comprising a composite compound is irradiated with hydrogen ions and inert gas ions to form the weekly bonded part in the film. CONSTITUTION:A superconductor film 2 comprising a composite compound is irradiated with hydrogen ions 4 and inert gas element ions 6 to form a weekly bonded part 5 in said film so that said film 2 may be formed into a structure divided into at least two regions by the weekly bonded part 5. For example, a sapphire single crystal is used for a substrate 1 while a YBa2Cu3O7 target sintered by a high-frequency planer magnetron sputtering process is sputter- evaporated in the mixed gas atmosphere of Ar and O2 to bond the crystalizable YBa2Cu3O7 film 2 onto the substrate 1. Finally, the superconductor film 2 heated at 500 deg.C for oxygen ion processing is formed into a mask pattern such as resist, etc., to form the weekly bonded part 5 by partially irradiating the part 5 with the hydrogen ions 4 and then the Ar ions 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62208652A JPS6450581A (en) | 1987-08-21 | 1987-08-21 | Manufacture of thin film superconducting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62208652A JPS6450581A (en) | 1987-08-21 | 1987-08-21 | Manufacture of thin film superconducting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6450581A true JPS6450581A (en) | 1989-02-27 |
Family
ID=16559794
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62208652A Pending JPS6450581A (en) | 1987-08-21 | 1987-08-21 | Manufacture of thin film superconducting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6450581A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02154485A (en) * | 1988-12-06 | 1990-06-13 | Nec Corp | Josephson element |
-
1987
- 1987-08-21 JP JP62208652A patent/JPS6450581A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02154485A (en) * | 1988-12-06 | 1990-06-13 | Nec Corp | Josephson element |
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