JPS6450528A - Wafer alignment mark and manufacture thereof - Google Patents

Wafer alignment mark and manufacture thereof

Info

Publication number
JPS6450528A
JPS6450528A JP62207761A JP20776187A JPS6450528A JP S6450528 A JPS6450528 A JP S6450528A JP 62207761 A JP62207761 A JP 62207761A JP 20776187 A JP20776187 A JP 20776187A JP S6450528 A JPS6450528 A JP S6450528A
Authority
JP
Japan
Prior art keywords
alignment mark
wafer alignment
film
wafer
periphery
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62207761A
Other languages
Japanese (ja)
Inventor
Takayuki Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP62207761A priority Critical patent/JPS6450528A/en
Publication of JPS6450528A publication Critical patent/JPS6450528A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To provide sufficient contrast at the boundary between a wafer alignment mark and the periphery thereof to accurately detect the position of the wafer alignment mark at an edge thereof, by forming fine undulations on the surface or periphery of the wafer alignment mark. CONSTITUTION:In order to register a mask with a wafer by means of applied and reflected light, the surface or periphery of a wafer alignment mark 32 formed on the wafer is provided with fine undulations. According to an embodiment, an insulating film 31 of an oxide or nitride is formed on a silicon substrate 30 and a projecting wafer alignment mark 32 is selectively formed at a predetermined position on the film 31. The wafer alignment mark 32 formed of polysilicon or polysilicide has edges 32a and 32b approximately vertical to the surface of the film 31 and also has fine undulations on the surface 32c thereof. A film to be etched 33 is formed all over the surface of the insulating film 31 including the wafer alignment mark 32 and a resist film 34 is deposited thereon.
JP62207761A 1987-08-21 1987-08-21 Wafer alignment mark and manufacture thereof Pending JPS6450528A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62207761A JPS6450528A (en) 1987-08-21 1987-08-21 Wafer alignment mark and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62207761A JPS6450528A (en) 1987-08-21 1987-08-21 Wafer alignment mark and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6450528A true JPS6450528A (en) 1989-02-27

Family

ID=16545111

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62207761A Pending JPS6450528A (en) 1987-08-21 1987-08-21 Wafer alignment mark and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6450528A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5528372A (en) * 1990-03-12 1996-06-18 Fujitsu Limited Alignment mark, laser trimmer and semiconductor device manufacturing process
US5876819A (en) * 1995-02-17 1999-03-02 Mitsubishi Denki Kabushiki Kaisha Crystal orientation detectable semiconductor substrate, and methods of manufacturing and using the same
JP2012064967A (en) * 2011-11-28 2012-03-29 Fuji Electric Co Ltd Semiconductor device and method of manufacturing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5528372A (en) * 1990-03-12 1996-06-18 Fujitsu Limited Alignment mark, laser trimmer and semiconductor device manufacturing process
US5876819A (en) * 1995-02-17 1999-03-02 Mitsubishi Denki Kabushiki Kaisha Crystal orientation detectable semiconductor substrate, and methods of manufacturing and using the same
JP2012064967A (en) * 2011-11-28 2012-03-29 Fuji Electric Co Ltd Semiconductor device and method of manufacturing the same

Similar Documents

Publication Publication Date Title
EP0335074A3 (en) Alignment mark system
JPS6450528A (en) Wafer alignment mark and manufacture thereof
JPS5629326A (en) Manufacture of semiconductor device
JPS5656632A (en) Manufacture of semiconductor element
JPS57138638A (en) Photoetching mask
JPS57199223A (en) Manufacture of semiconductor device
JPS6472567A (en) Manufacture of semiconductor device
JPS5627929A (en) Electron beam projection
JPS6450529A (en) Wafer alignment
JPS52130575A (en) Semiconductor device and its preparation
JPS5742143A (en) Manufacture of semiconductor device
JPS55151338A (en) Fabricating method of semiconductor device
JPS56126957A (en) Manufacture of semiconductor device
GB2000640A (en) Semiconductor device
JPS5455379A (en) Production of mesa type semiconductor device
JPS54144177A (en) Manufacturing mask for semiconductor device
JPS6415976A (en) Manufacture of semiconductor device
JPS52135675A (en) Anisotropic ethcing of semiconductor single crystal
JPS54107676A (en) Manufacture for semiconductor device
JPS5487078A (en) Semiconductor device
JPS5562750A (en) Semiconductor integrated circuit device
JPS5423480A (en) Manufacture for mis type semiconductor element
JPH06204217A (en) Manufacturing method of semiconductor device
JPS5642355A (en) Manufacture of semiconductor device
JPS56130961A (en) Manufacture of semiconductor device