JPS6446975A - Semiconductor integrated circuit and manufacture thereof - Google Patents
Semiconductor integrated circuit and manufacture thereofInfo
- Publication number
- JPS6446975A JPS6446975A JP20340987A JP20340987A JPS6446975A JP S6446975 A JPS6446975 A JP S6446975A JP 20340987 A JP20340987 A JP 20340987A JP 20340987 A JP20340987 A JP 20340987A JP S6446975 A JPS6446975 A JP S6446975A
- Authority
- JP
- Japan
- Prior art keywords
- region
- self
- gate region
- contact part
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE:To enable high density integration and high speed operation, by forming a gate region, an element isolation region, and a contact part of source.drain region all in a self-alignment structure. CONSTITUTION:An element isolation region by a field oxide film 17 by an SiO2 film is self-aligned, via a gate region by polycrystalline silicon 12, and the sidewalls 15, 16 of the gate region by an SiO2 film and an Si3N4 film. On the other hand, a contact part between a source region and a drain region is self-aligned via the gate region 12 and the sidewall 15. Therefore, the gate region, the element isolation region, and the contact part of a source.drain region are all subjected to self alignment. Thereby, mask-alignment margin is unnecessitated, and miniaturizing the element is enabled, so that high density integration and high speed operation of semiconductor integrated circuit can be realized.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62203409A JP2512760B2 (en) | 1987-08-18 | 1987-08-18 | Manufacturing method of semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62203409A JP2512760B2 (en) | 1987-08-18 | 1987-08-18 | Manufacturing method of semiconductor integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6446975A true JPS6446975A (en) | 1989-02-21 |
JP2512760B2 JP2512760B2 (en) | 1996-07-03 |
Family
ID=16473587
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62203409A Expired - Lifetime JP2512760B2 (en) | 1987-08-18 | 1987-08-18 | Manufacturing method of semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2512760B2 (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60178666A (en) * | 1984-02-27 | 1985-09-12 | Hitachi Ltd | Semiconductor device and manufacture thereof |
JPS61141180A (en) * | 1984-12-14 | 1986-06-28 | Nippon Telegr & Teleph Corp <Ntt> | Field-effect transistor and manufacture thereof |
-
1987
- 1987-08-18 JP JP62203409A patent/JP2512760B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60178666A (en) * | 1984-02-27 | 1985-09-12 | Hitachi Ltd | Semiconductor device and manufacture thereof |
JPS61141180A (en) * | 1984-12-14 | 1986-06-28 | Nippon Telegr & Teleph Corp <Ntt> | Field-effect transistor and manufacture thereof |
Also Published As
Publication number | Publication date |
---|---|
JP2512760B2 (en) | 1996-07-03 |
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