JPS6451636A - Manufacture of semiconductor integrated circuit - Google Patents

Manufacture of semiconductor integrated circuit

Info

Publication number
JPS6451636A
JPS6451636A JP20817087A JP20817087A JPS6451636A JP S6451636 A JPS6451636 A JP S6451636A JP 20817087 A JP20817087 A JP 20817087A JP 20817087 A JP20817087 A JP 20817087A JP S6451636 A JPS6451636 A JP S6451636A
Authority
JP
Japan
Prior art keywords
oxide film
mask
opening section
polysilicon
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20817087A
Other languages
Japanese (ja)
Inventor
Hirotaka Amakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP20817087A priority Critical patent/JPS6451636A/en
Publication of JPS6451636A publication Critical patent/JPS6451636A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To miniaturize an element isolation region, and to improve the degree of integration of an integrated circuit by depositing polysilicon onto the sidewall of an opening section in an oxide film, etching a nitride film in narrow width, using the oxide film, the size of the opening section of which is narrowed through oxidation, as a mask and employing the nitride film as a mask for selective oxidation. CONSTITUTION:An oxide film 2 for relaxing stress is formed onto an silicon substrate 1, and a nitride film 3 is deposited onto the oxide film 2. An oxide film 4 is deposited, and lastly the oxide film 4 is coated with an etching mask 5. An oxide film 4a is etched to shape an opening section 4b. Polysilicon 6 is deposited, and polysilicon 6a is etched so as to be left only on the sidewall of the oxide film 4a through anisotropic etching. The width of an opening section 6b is brought to approximately 0.6 micron at that time. Polysilicon is oxidized to shape an oxide film 7. The width of an opening section 7a is brought to approximately 0.2 micron after oxidation. A nitride film 3a is etched, using the oxide film 4a as a mask. Lastly, an oxide film 2a is formed through selective oxidation, employing the nitride film 3a as a mask, thus shaping an element isolation region.
JP20817087A 1987-08-24 1987-08-24 Manufacture of semiconductor integrated circuit Pending JPS6451636A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20817087A JPS6451636A (en) 1987-08-24 1987-08-24 Manufacture of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20817087A JPS6451636A (en) 1987-08-24 1987-08-24 Manufacture of semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS6451636A true JPS6451636A (en) 1989-02-27

Family

ID=16551817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20817087A Pending JPS6451636A (en) 1987-08-24 1987-08-24 Manufacture of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS6451636A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5397733A (en) * 1993-05-21 1995-03-14 Hyundai Electronics Industries Co., Ltd. Method for the construction of field oxide film in semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5397733A (en) * 1993-05-21 1995-03-14 Hyundai Electronics Industries Co., Ltd. Method for the construction of field oxide film in semiconductor device

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