JPS6441294A - Manufacture of solid-state laser - Google Patents

Manufacture of solid-state laser

Info

Publication number
JPS6441294A
JPS6441294A JP19771387A JP19771387A JPS6441294A JP S6441294 A JPS6441294 A JP S6441294A JP 19771387 A JP19771387 A JP 19771387A JP 19771387 A JP19771387 A JP 19771387A JP S6441294 A JPS6441294 A JP S6441294A
Authority
JP
Japan
Prior art keywords
substrate
oxide film
film
solid
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19771387A
Other languages
Japanese (ja)
Other versions
JP2587642B2 (en
Inventor
Akira Matsuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Komatsu Ltd
Original Assignee
Komatsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Ltd filed Critical Komatsu Ltd
Priority to JP19771387A priority Critical patent/JP2587642B2/en
Publication of JPS6441294A publication Critical patent/JPS6441294A/en
Application granted granted Critical
Publication of JP2587642B2 publication Critical patent/JP2587642B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To maintain thickness of a substrate with reproducibility in a process in which a rear of the substrate is first etched and to realize a solid-state laser with good luminous efficiency, by forming an etching stopper layer of a prescribed depth in the single-crystalline substrate. CONSTITUTION:A heat oxide film 12 is formed on a rear of a silicon substrate 11, and after the patterning of it, a silicon oxide film 13 is formed on a surface of the substrate 11. Next the surface of the substrate 11 is annealed, and a ZnS:Tb layer 14 is made to grow as a luminous layer on this annealed surface (f), and it is provided with a patterning process. A first insulation film 15 made of Ta2O5 is formed and a first electrode 16 is formed thereon. In succession the oxide film 12 on the rear of the substrate is used as a mask to perform anisotropic etching. Thereupon, said silicon film 13 functions as an etching stopper layer. Subsequently, the heat oxide film 12 is removed, and a second insulation film 17 made of Ta2O5 and a second electrode are formed on the surface after the removal.
JP19771387A 1987-08-07 1987-08-07 Method for manufacturing solid laser Expired - Lifetime JP2587642B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19771387A JP2587642B2 (en) 1987-08-07 1987-08-07 Method for manufacturing solid laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19771387A JP2587642B2 (en) 1987-08-07 1987-08-07 Method for manufacturing solid laser

Publications (2)

Publication Number Publication Date
JPS6441294A true JPS6441294A (en) 1989-02-13
JP2587642B2 JP2587642B2 (en) 1997-03-05

Family

ID=16379117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19771387A Expired - Lifetime JP2587642B2 (en) 1987-08-07 1987-08-07 Method for manufacturing solid laser

Country Status (1)

Country Link
JP (1) JP2587642B2 (en)

Also Published As

Publication number Publication date
JP2587642B2 (en) 1997-03-05

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