JPS6424460A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6424460A JPS6424460A JP18192387A JP18192387A JPS6424460A JP S6424460 A JPS6424460 A JP S6424460A JP 18192387 A JP18192387 A JP 18192387A JP 18192387 A JP18192387 A JP 18192387A JP S6424460 A JPS6424460 A JP S6424460A
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- gate electrode
- source
- drain regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18192387A JPS6424460A (en) | 1987-07-20 | 1987-07-20 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18192387A JPS6424460A (en) | 1987-07-20 | 1987-07-20 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6424460A true JPS6424460A (en) | 1989-01-26 |
Family
ID=16109268
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18192387A Pending JPS6424460A (en) | 1987-07-20 | 1987-07-20 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6424460A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6489632B1 (en) | 1993-01-18 | 2002-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a gate oxide film |
-
1987
- 1987-07-20 JP JP18192387A patent/JPS6424460A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6489632B1 (en) | 1993-01-18 | 2002-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a gate oxide film |
US6995432B2 (en) | 1993-01-18 | 2006-02-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a gate oxide film with some NTFTS with LDD regions and no PTFTS with LDD regions |
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