JPS6419732A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6419732A JPS6419732A JP17479087A JP17479087A JPS6419732A JP S6419732 A JPS6419732 A JP S6419732A JP 17479087 A JP17479087 A JP 17479087A JP 17479087 A JP17479087 A JP 17479087A JP S6419732 A JPS6419732 A JP S6419732A
- Authority
- JP
- Japan
- Prior art keywords
- silicon film
- polycrystalline silicon
- film
- contact hole
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Weting (AREA)
Abstract
PURPOSE:To flatten the surface of a polycrystalline silicon film buried in a contact hole by a method wherein, after an auxiliary film, consisting of the substance having the etching speed lower than that of the polycrystalline silicon film, is left on the recess located on the surface of the polycrystalline silicon film buried in a contact hole by conducting an etching back operation, the polycrystalline silicon film is etched back. CONSTITUTION:After the first crystal silicon film 15 has been grown in the contact hole 14 provided on an interlayer silicon oxide film 13, the second polycrystalline silicon film 16 is grown in such a manner that the contact hole 14 is completely filled up. Then, a photoresist 17 is coated on the whole surface of the second polycrystalline silicon film 16. Subsequently, the photoresist 17 is etched back until the lower layer of the polycrystalline film 16 is exposed, and the photoresist 17 is left on the recess 18 alone located at the upper part of the contact hole of the polycrystalline silicon film 16. Then, the second polycrystalline silicon film 16 and the first polycrystalline silicon film 15 are etched back by conducting isotropic plasma etching using SF6. As a result, the recess 18 on the polycrystalline silicon film 16 is removed, and the surface of the film 16 can be flattened.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17479087A JPS6419732A (en) | 1987-07-15 | 1987-07-15 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17479087A JPS6419732A (en) | 1987-07-15 | 1987-07-15 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6419732A true JPS6419732A (en) | 1989-01-23 |
Family
ID=15984718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17479087A Pending JPS6419732A (en) | 1987-07-15 | 1987-07-15 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6419732A (en) |
-
1987
- 1987-07-15 JP JP17479087A patent/JPS6419732A/en active Pending
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