JPS6412566A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6412566A
JPS6412566A JP62167682A JP16768287A JPS6412566A JP S6412566 A JPS6412566 A JP S6412566A JP 62167682 A JP62167682 A JP 62167682A JP 16768287 A JP16768287 A JP 16768287A JP S6412566 A JPS6412566 A JP S6412566A
Authority
JP
Japan
Prior art keywords
layer
inactive
affecting
semiconductor substrate
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62167682A
Other languages
Japanese (ja)
Inventor
Toshihiro Ohata
Jiro Oshima
Tatsuichi Ko
Toshiyo Itou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62167682A priority Critical patent/JPS6412566A/en
Publication of JPS6412566A publication Critical patent/JPS6412566A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To enable regulation of the resistance value without affecting an active or a passive element which is provided inside a semiconductor substrate by a method wherein polycrystalline silicon of resistor is doped with the inactive element. CONSTITUTION:An oxide film 2 is provided on a semiconductor substrate 1. Next, a polycrystalline silicon layer 5 is formed on the film 2. Silicon dioxide is formed on the layer 5 and inactive ions are implanted after resist is coated on as most part of the layer 5 is left exposed. As the result, an inactive element region 8 is formed in the layer 5 from its surface to inside. By these processes, a heat treatment can be dispensed with in a post-process, so that the resistance value can be regulated without affecting an active and oassive element.
JP62167682A 1987-07-07 1987-07-07 Manufacture of semiconductor device Pending JPS6412566A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62167682A JPS6412566A (en) 1987-07-07 1987-07-07 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62167682A JPS6412566A (en) 1987-07-07 1987-07-07 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6412566A true JPS6412566A (en) 1989-01-17

Family

ID=15854271

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62167682A Pending JPS6412566A (en) 1987-07-07 1987-07-07 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6412566A (en)

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