JPS6410097B2 - - Google Patents
Info
- Publication number
- JPS6410097B2 JPS6410097B2 JP6956181A JP6956181A JPS6410097B2 JP S6410097 B2 JPS6410097 B2 JP S6410097B2 JP 6956181 A JP6956181 A JP 6956181A JP 6956181 A JP6956181 A JP 6956181A JP S6410097 B2 JPS6410097 B2 JP S6410097B2
- Authority
- JP
- Japan
- Prior art keywords
- whiskers
- film
- wiring
- depth
- impurities
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 239000012535 impurity Substances 0.000 description 17
- 150000002500 ions Chemical class 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6956181A JPS57183053A (en) | 1981-05-06 | 1981-05-06 | Semiconductor device |
DE19823217026 DE3217026A1 (de) | 1981-05-06 | 1982-05-06 | Halbleitervorrichtung |
US06/717,597 US4899206A (en) | 1981-05-06 | 1985-04-01 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6956181A JPS57183053A (en) | 1981-05-06 | 1981-05-06 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57183053A JPS57183053A (en) | 1982-11-11 |
JPS6410097B2 true JPS6410097B2 (enrdf_load_html_response) | 1989-02-21 |
Family
ID=13406285
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6956181A Granted JPS57183053A (en) | 1981-05-06 | 1981-05-06 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57183053A (enrdf_load_html_response) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4890151A (en) * | 1983-03-12 | 1989-12-26 | Ricoh Company, Ltd. | Thin-film and its forming method |
JPH07120655B2 (ja) * | 1988-10-25 | 1995-12-20 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
US7157381B2 (en) * | 2004-06-15 | 2007-01-02 | Infineon Technologies Ag | Method for providing whisker-free aluminum metal lines or aluminum alloy lines in integrated circuits |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55158649A (en) * | 1979-05-30 | 1980-12-10 | Fujitsu Ltd | Manufacture of electrode wiring |
JPS57124431A (en) * | 1981-01-27 | 1982-08-03 | Toshiba Corp | Manufacture of semiconductor device |
-
1981
- 1981-05-06 JP JP6956181A patent/JPS57183053A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS57183053A (en) | 1982-11-11 |
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