JPS639584B2 - - Google Patents
Info
- Publication number
- JPS639584B2 JPS639584B2 JP15509783A JP15509783A JPS639584B2 JP S639584 B2 JPS639584 B2 JP S639584B2 JP 15509783 A JP15509783 A JP 15509783A JP 15509783 A JP15509783 A JP 15509783A JP S639584 B2 JPS639584 B2 JP S639584B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- target
- deposition apparatus
- plasma deposition
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000151 deposition Methods 0.000 claims description 50
- 230000008021 deposition Effects 0.000 claims description 45
- 238000004544 sputter deposition Methods 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 26
- 150000002500 ions Chemical class 0.000 claims description 20
- 239000013077 target material Substances 0.000 claims description 16
- 238000000605 extraction Methods 0.000 claims description 11
- 238000009826 distribution Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 59
- 239000007789 gas Substances 0.000 description 51
- 239000010409 thin film Substances 0.000 description 24
- 238000005477 sputtering target Methods 0.000 description 20
- 239000002184 metal Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 15
- 238000001816 cooling Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 238000005755 formation reaction Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 150000002736 metal compounds Chemical class 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910001507 metal halide Inorganic materials 0.000 description 4
- 150000005309 metal halides Chemical class 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 239000000498 cooling water Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 238000010849 ion bombardment Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000011343 solid material Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000006091 Macor Substances 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000004941 influx Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/354—Introduction of auxiliary energy into the plasma
- C23C14/357—Microwaves, e.g. electron cyclotron resonance enhanced sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
- H05H1/16—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields
- H05H1/18—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied electric and magnetic fields wherein the fields oscillate at very high frequency, e.g. in the microwave range, e.g. using cyclotron resonance
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15509783A JPS6050167A (ja) | 1983-08-26 | 1983-08-26 | プラズマ付着装置 |
| EP83305201A EP0103461B1 (en) | 1982-09-10 | 1983-09-07 | Plasma deposition method and apparatus |
| DE8383305201T DE3378508D1 (en) | 1982-09-10 | 1983-09-07 | Plasma deposition method and apparatus |
| US06/530,671 US4492620A (en) | 1982-09-10 | 1983-09-09 | Plasma deposition method and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15509783A JPS6050167A (ja) | 1983-08-26 | 1983-08-26 | プラズマ付着装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6050167A JPS6050167A (ja) | 1985-03-19 |
| JPS639584B2 true JPS639584B2 (enrdf_load_stackoverflow) | 1988-02-29 |
Family
ID=15598557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15509783A Granted JPS6050167A (ja) | 1982-09-10 | 1983-08-26 | プラズマ付着装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6050167A (enrdf_load_stackoverflow) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0627324B2 (ja) * | 1984-08-31 | 1994-04-13 | 株式会社日立製作所 | プラズマ処理方法及びその装置 |
| JPS61104074A (ja) * | 1984-10-26 | 1986-05-22 | Hitachi Ltd | スパッタリング方法及びその装置 |
| JPS61279674A (ja) * | 1985-06-05 | 1986-12-10 | Osaka Shinku Kiki Seisakusho:Kk | スパツタ装置 |
| JPS6295823A (ja) * | 1985-10-22 | 1987-05-02 | Sumitomo Electric Ind Ltd | 半導体集積回路の製造方法 |
| JPH0621352B2 (ja) * | 1985-12-25 | 1994-03-23 | 株式会社日立製作所 | スパツタリング装置 |
| JPS6376867A (ja) * | 1986-09-19 | 1988-04-07 | Mitsubishi Kasei Corp | 反応性スパツタリング装置 |
| JPS63157863A (ja) * | 1986-12-19 | 1988-06-30 | Fujitsu Ltd | Ｅｃｒスパツタリング法 |
| JP2566137B2 (ja) * | 1986-12-25 | 1996-12-25 | ティーディーケイ株式会社 | 薄膜の製造方法 |
| JP2602267B2 (ja) * | 1988-02-08 | 1997-04-23 | 日本電信電話株式会社 | プラズマ生成装置およびプラズマを利用した薄膜形成装置 |
| KR920003789B1 (ko) * | 1988-02-08 | 1992-05-14 | 니뽄 덴신 덴와 가부시끼가이샤 | 플라즈마 스퍼터링을 이용한 박막 형성 장치 및 이온원 |
| JP2595009B2 (ja) * | 1988-02-08 | 1997-03-26 | 日本電信電話株式会社 | プラズマ生成装置およびプラズマを利用した薄膜形成装置 |
| US4911814A (en) * | 1988-02-08 | 1990-03-27 | Nippon Telegraph And Telephone Corporation | Thin film forming apparatus and ion source utilizing sputtering with microwave plasma |
| JPH01246357A (ja) * | 1988-03-28 | 1989-10-02 | Mitsubishi Heavy Ind Ltd | 立方晶窒化ホウ素膜の製造方法 |
| JP2506961B2 (ja) * | 1988-07-25 | 1996-06-12 | 松下電器産業株式会社 | 薄膜トランジスタの製造方法 |
| JP2506978B2 (ja) * | 1988-08-22 | 1996-06-12 | 松下電器産業株式会社 | チタン酸鉛薄膜の製造方法 |
| JPH02219225A (ja) * | 1989-02-20 | 1990-08-31 | Matsushita Electric Ind Co Ltd | 膜堆積装置および膜堆積方法 |
| JP3430036B2 (ja) * | 1998-10-29 | 2003-07-28 | 松下電器産業株式会社 | 薄膜の形成方法及び半導体発光素子の製造方法 |
| JP3957198B2 (ja) * | 2003-03-07 | 2007-08-15 | 日本電信電話株式会社 | 薄膜形成方法 |
| JP4493999B2 (ja) * | 2003-12-11 | 2010-06-30 | エム・イー・エス・アフティ株式会社 | プラズマ成膜装置及び該装置を用いた膜形成方法 |
| JP7488166B2 (ja) * | 2020-09-25 | 2024-05-21 | Ｊｓｗアフティ株式会社 | ターゲットおよび成膜装置 |
| UA127223C2 (uk) * | 2020-09-25 | 2023-06-14 | Національний Науковий Центр "Харківський Фізико-Технічний Інститут" | Спосіб створення вакуумно-дугової катодної плазми |
-
1983
- 1983-08-26 JP JP15509783A patent/JPS6050167A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6050167A (ja) | 1985-03-19 |
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