JPS6394673A - シヨツトキバリア半導体装置の製造方法 - Google Patents
シヨツトキバリア半導体装置の製造方法Info
- Publication number
- JPS6394673A JPS6394673A JP24059186A JP24059186A JPS6394673A JP S6394673 A JPS6394673 A JP S6394673A JP 24059186 A JP24059186 A JP 24059186A JP 24059186 A JP24059186 A JP 24059186A JP S6394673 A JPS6394673 A JP S6394673A
- Authority
- JP
- Japan
- Prior art keywords
- thin layer
- layer
- metal layer
- schottky barrier
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 title claims abstract description 45
- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 239000010936 titanium Substances 0.000 claims abstract description 16
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 7
- 230000001590 oxidative effect Effects 0.000 claims abstract description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical group [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 12
- 239000000758 substrate Substances 0.000 abstract description 8
- 238000007738 vacuum evaporation Methods 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 abstract description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910000927 Ge alloy Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 206010057040 Temperature intolerance Diseases 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 235000013601 eggs Nutrition 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000008543 heat sensitivity Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- NMJKIRUDPFBRHW-UHFFFAOYSA-N titanium Chemical compound [Ti].[Ti] NMJKIRUDPFBRHW-UHFFFAOYSA-N 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24059186A JPS6394673A (ja) | 1986-10-09 | 1986-10-09 | シヨツトキバリア半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24059186A JPS6394673A (ja) | 1986-10-09 | 1986-10-09 | シヨツトキバリア半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6394673A true JPS6394673A (ja) | 1988-04-25 |
| JPH0515311B2 JPH0515311B2 (enrdf_load_stackoverflow) | 1993-03-01 |
Family
ID=17061783
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24059186A Granted JPS6394673A (ja) | 1986-10-09 | 1986-10-09 | シヨツトキバリア半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6394673A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5221638A (en) * | 1991-09-10 | 1993-06-22 | Sanken Electric Co., Ltd. | Method of manufacturing a Schottky barrier semiconductor device |
| EP0579286A3 (en) * | 1988-11-11 | 1994-09-07 | Sanken Electric Co Ltd | Method of fabricating a semiconductor device with schottky barrier |
| JP2002334998A (ja) * | 2001-05-08 | 2002-11-22 | Mitsubishi Electric Corp | 炭化珪素半導体装置およびその製造方法 |
| JP2006287264A (ja) * | 2006-07-24 | 2006-10-19 | Nissan Motor Co Ltd | 炭化珪素半導体装置 |
| JP2007227495A (ja) * | 2006-02-22 | 2007-09-06 | Mitsubishi Electric Corp | ＳｉＣ半導体装置の製造方法及びＳｉＣ半導体装置 |
-
1986
- 1986-10-09 JP JP24059186A patent/JPS6394673A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0579286A3 (en) * | 1988-11-11 | 1994-09-07 | Sanken Electric Co Ltd | Method of fabricating a semiconductor device with schottky barrier |
| US5221638A (en) * | 1991-09-10 | 1993-06-22 | Sanken Electric Co., Ltd. | Method of manufacturing a Schottky barrier semiconductor device |
| JP2002334998A (ja) * | 2001-05-08 | 2002-11-22 | Mitsubishi Electric Corp | 炭化珪素半導体装置およびその製造方法 |
| JP2007227495A (ja) * | 2006-02-22 | 2007-09-06 | Mitsubishi Electric Corp | ＳｉＣ半導体装置の製造方法及びＳｉＣ半導体装置 |
| JP2006287264A (ja) * | 2006-07-24 | 2006-10-19 | Nissan Motor Co Ltd | 炭化珪素半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0515311B2 (enrdf_load_stackoverflow) | 1993-03-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3189973A (en) | Method of fabricating a semiconductor device | |
| JPH051623B2 (enrdf_load_stackoverflow) | ||
| JPH10512716A (ja) | オーム接触体およびこのようなオーム接触体を備えた半導体デバイスを製造する方法 | |
| US3616380A (en) | Barrier layer devices and methods for their manufacture | |
| JPS6394673A (ja) | シヨツトキバリア半導体装置の製造方法 | |
| JPH02252267A (ja) | 半導体装置の製造方法 | |
| US3951693A (en) | Ion-implanted self-aligned transistor device including the fabrication method therefor | |
| JPS62113421A (ja) | 半導体装置の製造方法 | |
| JPS59188978A (ja) | シヨツトキゲ−ト型ｆｅｔの製造方法 | |
| JPH0515312B2 (enrdf_load_stackoverflow) | ||
| JPS598356A (ja) | 半導体集積回路装置の製造方法 | |
| JPS5873136A (ja) | 半導体デバイスの製造方法 | |
| JP2675994B2 (ja) | 炭化けい素を用いた電界効果トランジスタ | |
| JP3340868B2 (ja) | 超電導ベーストランジスタ及びその製造方法 | |
| JP2708175B2 (ja) | ＩｎＳｂプレーナ光起電力形素子の製造方法 | |
| JPH03211880A (ja) | ショットキー接合の形成方法 | |
| JPS594073A (ja) | 半導体装置の製造方法 | |
| JPS604214A (ja) | 半導体装置の製造方法 | |
| JPH01231367A (ja) | 半導体装置の製造方法 | |
| JPS60186038A (ja) | 半導体装置 | |
| JPS6151941A (ja) | 電極・配線膜の製造方法 | |
| JPH0797634B2 (ja) | 電界効果トランジスタとその製造方法 | |
| JPS6170717A (ja) | 半導体素子の製造方法 | |
| JPH01296667A (ja) | ヘテロ接合バイポーラトランジスタの製造方法 | |
| JPH03165035A (ja) | 半導体装置の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |