JPS6386467A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS6386467A
JPS6386467A JP61229714A JP22971486A JPS6386467A JP S6386467 A JPS6386467 A JP S6386467A JP 61229714 A JP61229714 A JP 61229714A JP 22971486 A JP22971486 A JP 22971486A JP S6386467 A JPS6386467 A JP S6386467A
Authority
JP
Japan
Prior art keywords
region
well region
recess
semiconductor substrate
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61229714A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0330307B2 (enExample
Inventor
Toshiharu Watanabe
渡辺　寿治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP61229714A priority Critical patent/JPS6386467A/ja
Publication of JPS6386467A publication Critical patent/JPS6386467A/ja
Publication of JPH0330307B2 publication Critical patent/JPH0330307B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/856—Complementary IGFETs, e.g. CMOS the complementary IGFETs having different architectures than each other, e.g. high-voltage and low-voltage CMOS

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP61229714A 1986-09-30 1986-09-30 半導体装置 Granted JPS6386467A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61229714A JPS6386467A (ja) 1986-09-30 1986-09-30 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61229714A JPS6386467A (ja) 1986-09-30 1986-09-30 半導体装置

Publications (2)

Publication Number Publication Date
JPS6386467A true JPS6386467A (ja) 1988-04-16
JPH0330307B2 JPH0330307B2 (enExample) 1991-04-26

Family

ID=16896549

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61229714A Granted JPS6386467A (ja) 1986-09-30 1986-09-30 半導体装置

Country Status (1)

Country Link
JP (1) JPS6386467A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100511930B1 (ko) * 1998-12-16 2005-10-26 주식회사 하이닉스반도체 반도체소자의 제조방법
JP2007294857A (ja) * 2006-03-28 2007-11-08 Elpida Memory Inc 半導体装置及びその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56133844A (en) * 1980-03-22 1981-10-20 Toshiba Corp Semiconductor device
JPS5730342A (en) * 1980-07-30 1982-02-18 Toshiba Corp Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56133844A (en) * 1980-03-22 1981-10-20 Toshiba Corp Semiconductor device
JPS5730342A (en) * 1980-07-30 1982-02-18 Toshiba Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100511930B1 (ko) * 1998-12-16 2005-10-26 주식회사 하이닉스반도체 반도체소자의 제조방법
JP2007294857A (ja) * 2006-03-28 2007-11-08 Elpida Memory Inc 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPH0330307B2 (enExample) 1991-04-26

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