JPS6381867A - 半導体拡散ストレンゲ−ジ - Google Patents

半導体拡散ストレンゲ−ジ

Info

Publication number
JPS6381867A
JPS6381867A JP61226632A JP22663286A JPS6381867A JP S6381867 A JPS6381867 A JP S6381867A JP 61226632 A JP61226632 A JP 61226632A JP 22663286 A JP22663286 A JP 22663286A JP S6381867 A JPS6381867 A JP S6381867A
Authority
JP
Japan
Prior art keywords
strain gauge
resistance
temperature
semiconductor diffusion
gauge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61226632A
Other languages
English (en)
Japanese (ja)
Inventor
Hideaki Yamagishi
秀章 山岸
Mayumi Nomiyama
野見山　真弓
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yokogawa Electric Corp
Original Assignee
Yokogawa Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yokogawa Electric Corp filed Critical Yokogawa Electric Corp
Priority to JP61226632A priority Critical patent/JPS6381867A/ja
Priority to US07/089,504 priority patent/US4841272A/en
Priority to DE19873731832 priority patent/DE3731832A1/de
Priority to GB8722236A priority patent/GB2196790B/en
Publication of JPS6381867A publication Critical patent/JPS6381867A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
    • G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49103—Strain gauge making

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
JP61226632A 1986-09-25 1986-09-25 半導体拡散ストレンゲ−ジ Pending JPS6381867A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP61226632A JPS6381867A (ja) 1986-09-25 1986-09-25 半導体拡散ストレンゲ−ジ
US07/089,504 US4841272A (en) 1986-09-25 1987-08-26 Semiconductor diffusion strain gage
DE19873731832 DE3731832A1 (de) 1986-09-25 1987-09-22 Halbleiter-dehnungsmesser und verfahren zu seiner herstellung
GB8722236A GB2196790B (en) 1986-09-25 1987-09-22 Semiconductor diffusion strain gauge

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61226632A JPS6381867A (ja) 1986-09-25 1986-09-25 半導体拡散ストレンゲ−ジ

Publications (1)

Publication Number Publication Date
JPS6381867A true JPS6381867A (ja) 1988-04-12

Family

ID=16848225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61226632A Pending JPS6381867A (ja) 1986-09-25 1986-09-25 半導体拡散ストレンゲ−ジ

Country Status (4)

Country Link
US (1) US4841272A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS6381867A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3731832A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2196790B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0544934B1 (de) * 1991-11-30 1996-10-02 Endress U. Hauser Gmbh U. Co. Verfahren zum Stabilisieren der Oberflächeneigenschaften von in Vakuum temperaturzubehandelnden Gegenständen
FR2685080B1 (fr) * 1991-12-17 1995-09-01 Thomson Csf Capteur mecanique comprenant un film de polymere.
JPH06350105A (ja) * 1993-06-07 1994-12-22 Nec Corp マイクロマシンとその製造方法
CA2176052A1 (en) * 1995-06-07 1996-12-08 James D. Seefeldt Transducer having a resonating silicon beam and method for forming same
US5736430A (en) * 1995-06-07 1998-04-07 Ssi Technologies, Inc. Transducer having a silicon diaphragm and method for forming same
US6021675A (en) * 1995-06-07 2000-02-08 Ssi Technologies, Inc. Resonating structure and method for forming the resonating structure
US5526700A (en) * 1995-09-29 1996-06-18 Akeel; Hadi A. Six component force gage
US6079277A (en) * 1997-12-12 2000-06-27 The Research Foundation Of State University Of New York Methods and sensors for detecting strain and stress
GB2369889B (en) * 2001-07-13 2004-06-09 John David Barnett Strain sensing installation
US6739199B1 (en) 2003-03-10 2004-05-25 Hewlett-Packard Development Company, L.P. Substrate and method of forming substrate for MEMS device with strain gage
US9864038B2 (en) * 2012-06-29 2018-01-09 Asahi Kasei Microdevices Corporation Hall electromotive force compensation device and hall electromotive force compensation method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5878470A (ja) * 1981-11-04 1983-05-12 Mitsubishi Electric Corp 半導体圧力検出装置
JPS60207360A (ja) * 1984-03-30 1985-10-18 Yokogawa Hokushin Electric Corp 半導体抵抗素子

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2753378A1 (de) * 1977-11-04 1979-05-10 Bbc Brown Boveri & Cie Verfahren zur herstellung von silizium-bauelementen, die teilweise eine einkristalline struktur aufweisen muessen, und verwendung des verfahrens zur herstellung von drucksensoren
US4317126A (en) * 1980-04-14 1982-02-23 Motorola, Inc. Silicon pressure sensor
US4510671A (en) * 1981-08-31 1985-04-16 Kulite Semiconductor Products, Inc. Dielectrically isolated transducer employing single crystal strain gages

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5878470A (ja) * 1981-11-04 1983-05-12 Mitsubishi Electric Corp 半導体圧力検出装置
JPS60207360A (ja) * 1984-03-30 1985-10-18 Yokogawa Hokushin Electric Corp 半導体抵抗素子

Also Published As

Publication number Publication date
GB8722236D0 (en) 1987-10-28
DE3731832C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-11-02
GB2196790A (en) 1988-05-05
US4841272A (en) 1989-06-20
GB2196790B (en) 1991-04-24
DE3731832A1 (de) 1988-04-07

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