GB2196790B - Semiconductor diffusion strain gauge - Google Patents

Semiconductor diffusion strain gauge

Info

Publication number
GB2196790B
GB2196790B GB8722236A GB8722236A GB2196790B GB 2196790 B GB2196790 B GB 2196790B GB 8722236 A GB8722236 A GB 8722236A GB 8722236 A GB8722236 A GB 8722236A GB 2196790 B GB2196790 B GB 2196790B
Authority
GB
United Kingdom
Prior art keywords
strain gauge
semiconductor diffusion
diffusion strain
semiconductor
gauge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB8722236A
Other languages
English (en)
Other versions
GB2196790A (en
GB8722236D0 (en
Inventor
Hideaki Yamagishi
Mayumi Nomiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yokogawa Electric Corp
Original Assignee
Yokogawa Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yokogawa Electric Corp filed Critical Yokogawa Electric Corp
Publication of GB8722236D0 publication Critical patent/GB8722236D0/en
Publication of GB2196790A publication Critical patent/GB2196790A/en
Application granted granted Critical
Publication of GB2196790B publication Critical patent/GB2196790B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
    • G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49103—Strain gauge making

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
GB8722236A 1986-09-25 1987-09-22 Semiconductor diffusion strain gauge Expired - Lifetime GB2196790B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61226632A JPS6381867A (ja) 1986-09-25 1986-09-25 半導体拡散ストレンゲ−ジ

Publications (3)

Publication Number Publication Date
GB8722236D0 GB8722236D0 (en) 1987-10-28
GB2196790A GB2196790A (en) 1988-05-05
GB2196790B true GB2196790B (en) 1991-04-24

Family

ID=16848225

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8722236A Expired - Lifetime GB2196790B (en) 1986-09-25 1987-09-22 Semiconductor diffusion strain gauge

Country Status (4)

Country Link
US (1) US4841272A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS6381867A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3731832A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2196790B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE59108247D1 (de) * 1991-11-30 1996-11-07 Endress Hauser Gmbh Co Verfahren zum Stabilisieren der Oberflächeneigenschaften von in Vakuum temperaturzubehandelnden Gegenständen
FR2685080B1 (fr) * 1991-12-17 1995-09-01 Thomson Csf Capteur mecanique comprenant un film de polymere.
JPH06350105A (ja) * 1993-06-07 1994-12-22 Nec Corp マイクロマシンとその製造方法
US6021675A (en) * 1995-06-07 2000-02-08 Ssi Technologies, Inc. Resonating structure and method for forming the resonating structure
CA2176052A1 (en) * 1995-06-07 1996-12-08 James D. Seefeldt Transducer having a resonating silicon beam and method for forming same
US5736430A (en) * 1995-06-07 1998-04-07 Ssi Technologies, Inc. Transducer having a silicon diaphragm and method for forming same
US5526700A (en) * 1995-09-29 1996-06-18 Akeel; Hadi A. Six component force gage
US6079277A (en) * 1997-12-12 2000-06-27 The Research Foundation Of State University Of New York Methods and sensors for detecting strain and stress
GB2369889B (en) * 2001-07-13 2004-06-09 John David Barnett Strain sensing installation
US6739199B1 (en) 2003-03-10 2004-05-25 Hewlett-Packard Development Company, L.P. Substrate and method of forming substrate for MEMS device with strain gage
CN104303065B (zh) * 2012-06-29 2017-04-12 旭化成微电子株式会社 霍尔电动势校正装置以及霍尔电动势校正方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1581215A (en) * 1977-11-04 1980-12-10 Bbc Brown Boveri & Cie Method of producing a silicon component of which a portion is required to be monocrystalline

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4317126A (en) * 1980-04-14 1982-02-23 Motorola, Inc. Silicon pressure sensor
US4510671A (en) * 1981-08-31 1985-04-16 Kulite Semiconductor Products, Inc. Dielectrically isolated transducer employing single crystal strain gages
JPS5878470A (ja) * 1981-11-04 1983-05-12 Mitsubishi Electric Corp 半導体圧力検出装置
JPS60207360A (ja) * 1984-03-30 1985-10-18 Yokogawa Hokushin Electric Corp 半導体抵抗素子

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1581215A (en) * 1977-11-04 1980-12-10 Bbc Brown Boveri & Cie Method of producing a silicon component of which a portion is required to be monocrystalline

Also Published As

Publication number Publication date
GB2196790A (en) 1988-05-05
DE3731832A1 (de) 1988-04-07
US4841272A (en) 1989-06-20
DE3731832C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1989-11-02
GB8722236D0 (en) 1987-10-28
JPS6381867A (ja) 1988-04-12

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19970922