JPS6380865U - - Google Patents
Info
- Publication number
- JPS6380865U JPS6380865U JP17563286U JP17563286U JPS6380865U JP S6380865 U JPS6380865 U JP S6380865U JP 17563286 U JP17563286 U JP 17563286U JP 17563286 U JP17563286 U JP 17563286U JP S6380865 U JPS6380865 U JP S6380865U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- conductive layer
- silicon substrate
- layer
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17563286U JPS6380865U (cs) | 1986-11-15 | 1986-11-15 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17563286U JPS6380865U (cs) | 1986-11-15 | 1986-11-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6380865U true JPS6380865U (cs) | 1988-05-27 |
Family
ID=31115139
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17563286U Pending JPS6380865U (cs) | 1986-11-15 | 1986-11-15 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6380865U (cs) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01302863A (ja) * | 1988-05-31 | 1989-12-06 | Sony Corp | Mis型トランジスタの製造方法 |
-
1986
- 1986-11-15 JP JP17563286U patent/JPS6380865U/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01302863A (ja) * | 1988-05-31 | 1989-12-06 | Sony Corp | Mis型トランジスタの製造方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2744808B2 (ja) | 自己整合トランジスタの製造方法 | |
JPH0758333A (ja) | 電力用mosfet及びその製造方法 | |
US4841347A (en) | MOS VLSI device having shallow junctions and method of making same | |
JP3307112B2 (ja) | 半導体装置の製造方法 | |
JPH0521450A (ja) | 半導体装置及びその製造方法 | |
JPH0824144B2 (ja) | 半導体装置の製造方法 | |
JPH09129868A (ja) | 半導体装置及びその製造方法 | |
JPH03109775A (ja) | 絶縁ゲート型半導体装置 | |
JPS6380865U (cs) | ||
JP2515524B2 (ja) | 絶縁ゲ―ト電界効果トランジスタの製造方法 | |
KR970053502A (ko) | 반도체 장치 및 그 제조 방법 | |
JPS6298663A (ja) | 半導体集積回路装置 | |
JPS6116573A (ja) | Mis型半導体装置の製造方法 | |
US6022767A (en) | Semiconductor device with insulated gate electrode and method of fabricating the same | |
JP3162745B2 (ja) | 絶縁ゲート形電界効果トランジスタの製造方法 | |
JPS6244819B2 (cs) | ||
JP2925910B2 (ja) | 絶縁ゲート型半導体装置の製造方法 | |
JP2715494B2 (ja) | 半導体装置の製造方法 | |
JP2807718B2 (ja) | 半導体装置およびその製造方法 | |
JPS62159468A (ja) | 半導体装置 | |
JP2668713B2 (ja) | 高耐圧半導体装置 | |
JPH01235277A (ja) | 縦型電界効果トランジスタ | |
JP3848782B2 (ja) | 半導体装置の製造方法 | |
JPS6469057A (en) | Semiconductor device and manufacture thereof | |
JPH0828368B2 (ja) | 半導体装置の製造方法 |