JPS637653B2 - - Google Patents

Info

Publication number
JPS637653B2
JPS637653B2 JP56092629A JP9262981A JPS637653B2 JP S637653 B2 JPS637653 B2 JP S637653B2 JP 56092629 A JP56092629 A JP 56092629A JP 9262981 A JP9262981 A JP 9262981A JP S637653 B2 JPS637653 B2 JP S637653B2
Authority
JP
Japan
Prior art keywords
wafer
substrate
substrate holder
clamp plate
holder device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56092629A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57205955A (en
Inventor
Tei Kawai
Tsuneo Hiramatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NITSUSHIN HAIBORUTEEJI KK
Original Assignee
NITSUSHIN HAIBORUTEEJI KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NITSUSHIN HAIBORUTEEJI KK filed Critical NITSUSHIN HAIBORUTEEJI KK
Priority to JP56092629A priority Critical patent/JPS57205955A/ja
Publication of JPS57205955A publication Critical patent/JPS57205955A/ja
Publication of JPS637653B2 publication Critical patent/JPS637653B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
JP56092629A 1981-06-15 1981-06-15 Ion implanting device Granted JPS57205955A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56092629A JPS57205955A (en) 1981-06-15 1981-06-15 Ion implanting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56092629A JPS57205955A (en) 1981-06-15 1981-06-15 Ion implanting device

Publications (2)

Publication Number Publication Date
JPS57205955A JPS57205955A (en) 1982-12-17
JPS637653B2 true JPS637653B2 (enrdf_load_stackoverflow) 1988-02-17

Family

ID=14059731

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56092629A Granted JPS57205955A (en) 1981-06-15 1981-06-15 Ion implanting device

Country Status (1)

Country Link
JP (1) JPS57205955A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61173445A (ja) * 1985-01-28 1986-08-05 Tokyo Erekutoron Kk ウエハの真空処理装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4914102A (enrdf_load_stackoverflow) * 1972-05-16 1974-02-07
JPS52149981A (en) * 1976-06-09 1977-12-13 Hitachi Ltd Wafer scanning device
JPS5950221B2 (ja) * 1977-12-24 1984-12-07 富士電機株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS57205955A (en) 1982-12-17

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