JPS6376360A - 半導体集積回路の製造方法 - Google Patents
半導体集積回路の製造方法Info
- Publication number
- JPS6376360A JPS6376360A JP61220700A JP22070086A JPS6376360A JP S6376360 A JPS6376360 A JP S6376360A JP 61220700 A JP61220700 A JP 61220700A JP 22070086 A JP22070086 A JP 22070086A JP S6376360 A JPS6376360 A JP S6376360A
- Authority
- JP
- Japan
- Prior art keywords
- region
- diffusion layer
- layer
- epitaxial layer
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
- H10D84/0116—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including integrated injection logic [I2L]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61220700A JPS6376360A (ja) | 1986-09-18 | 1986-09-18 | 半導体集積回路の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61220700A JPS6376360A (ja) | 1986-09-18 | 1986-09-18 | 半導体集積回路の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6376360A true JPS6376360A (ja) | 1988-04-06 |
| JPH0577301B2 JPH0577301B2 (enrdf_load_stackoverflow) | 1993-10-26 |
Family
ID=16755120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61220700A Granted JPS6376360A (ja) | 1986-09-18 | 1986-09-18 | 半導体集積回路の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6376360A (enrdf_load_stackoverflow) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5350686A (en) * | 1976-10-19 | 1978-05-09 | Mitsubishi Electric Corp | Production of semiconductor integrated circuit |
| JPS5384578A (en) * | 1976-12-29 | 1978-07-26 | Fujitsu Ltd | Semiconductor integrated circuit |
-
1986
- 1986-09-18 JP JP61220700A patent/JPS6376360A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5350686A (en) * | 1976-10-19 | 1978-05-09 | Mitsubishi Electric Corp | Production of semiconductor integrated circuit |
| JPS5384578A (en) * | 1976-12-29 | 1978-07-26 | Fujitsu Ltd | Semiconductor integrated circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0577301B2 (enrdf_load_stackoverflow) | 1993-10-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |