JPS6364907B2 - - Google Patents
Info
- Publication number
- JPS6364907B2 JPS6364907B2 JP56037933A JP3793381A JPS6364907B2 JP S6364907 B2 JPS6364907 B2 JP S6364907B2 JP 56037933 A JP56037933 A JP 56037933A JP 3793381 A JP3793381 A JP 3793381A JP S6364907 B2 JPS6364907 B2 JP S6364907B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- emitter layer
- anode
- type emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
Landscapes
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56037933A JPS57153467A (en) | 1981-03-18 | 1981-03-18 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56037933A JPS57153467A (en) | 1981-03-18 | 1981-03-18 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57153467A JPS57153467A (en) | 1982-09-22 |
| JPS6364907B2 true JPS6364907B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1988-12-14 |
Family
ID=12511352
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56037933A Granted JPS57153467A (en) | 1981-03-18 | 1981-03-18 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57153467A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6099552U (ja) * | 1983-12-12 | 1985-07-06 | 日本インター株式会社 | ゲ−トタ−ンオフサイリスタ |
| GB2153586B (en) * | 1984-01-31 | 1987-06-24 | Westinghouse Brake & Signal | Gate turn-off thyristor |
| JPS60189260A (ja) * | 1984-03-09 | 1985-09-26 | Toshiba Corp | 逆阻止型ゲートターンオフサイリスタ |
| JPS629669A (ja) * | 1985-07-08 | 1987-01-17 | Toshiba Corp | ゲ−トタ−ンオフサイリスタ |
| JPH061831B2 (ja) * | 1986-07-08 | 1994-01-05 | 株式会社日立製作所 | ゲ−トタ−ンオフサイリスタ |
| JP2688510B2 (ja) * | 1988-12-06 | 1997-12-10 | 株式会社日立製作所 | ゲートターンオフサイリスタの駆動方法 |
| JPH0758777B2 (ja) * | 1989-04-04 | 1995-06-21 | 株式会社日立製作所 | ゲートターンオフサイリスタ |
| EP3073530B1 (en) | 2015-03-23 | 2017-05-03 | ABB Schweiz AG | Reverse conducting power semiconductor device |
-
1981
- 1981-03-18 JP JP56037933A patent/JPS57153467A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57153467A (en) | 1982-09-22 |