JPS6362593B2 - - Google Patents

Info

Publication number
JPS6362593B2
JPS6362593B2 JP12190380A JP12190380A JPS6362593B2 JP S6362593 B2 JPS6362593 B2 JP S6362593B2 JP 12190380 A JP12190380 A JP 12190380A JP 12190380 A JP12190380 A JP 12190380A JP S6362593 B2 JPS6362593 B2 JP S6362593B2
Authority
JP
Japan
Prior art keywords
resist
etching
dry etching
weight
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12190380A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5747875A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12190380A priority Critical patent/JPS5747875A/ja
Publication of JPS5747875A publication Critical patent/JPS5747875A/ja
Publication of JPS6362593B2 publication Critical patent/JPS6362593B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
JP12190380A 1980-09-02 1980-09-02 Resist composition Granted JPS5747875A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12190380A JPS5747875A (en) 1980-09-02 1980-09-02 Resist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12190380A JPS5747875A (en) 1980-09-02 1980-09-02 Resist composition

Publications (2)

Publication Number Publication Date
JPS5747875A JPS5747875A (en) 1982-03-18
JPS6362593B2 true JPS6362593B2 (enrdf_load_stackoverflow) 1988-12-02

Family

ID=14822754

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12190380A Granted JPS5747875A (en) 1980-09-02 1980-09-02 Resist composition

Country Status (1)

Country Link
JP (1) JPS5747875A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58182633A (ja) * 1982-04-19 1983-10-25 Tokyo Ohka Kogyo Co Ltd ポジ型画像の形成方法
JPS61130947A (ja) * 1984-11-30 1986-06-18 Japan Synthetic Rubber Co Ltd ポジ型レジスト組成物
JPS61219951A (ja) * 1985-03-27 1986-09-30 Japan Synthetic Rubber Co Ltd ポジ型感放射線性組成物
JP2555589B2 (ja) * 1987-03-26 1996-11-20 日本合成ゴム株式会社 集積回路作製用ポジ型感放射線性樹脂組成物
US4968582A (en) * 1988-06-28 1990-11-06 Mcnc And University Of Nc At Charlotte Photoresists resistant to oxygen plasmas
US5114827A (en) * 1988-06-28 1992-05-19 Microelectronics Center Of N.C. Photoresists resistant to oxygen plasmas
KR101142999B1 (ko) 2005-02-03 2012-05-08 주식회사 삼양이엠에스 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한패턴의 형성 방법 및 상기 포토레지스트 조성물을 이용한박막 트랜지스터 표시판의 제조 방법

Also Published As

Publication number Publication date
JPS5747875A (en) 1982-03-18

Similar Documents

Publication Publication Date Title
US4015986A (en) Method of developing and stripping positive photoresist
EP0045639B1 (en) Method of forming a microscopic pattern
KR100242920B1 (ko) 저수준의 금속이온을 갖는 포토레지스트(rhotoresists having a low level of metal ions)
KR0174316B1 (ko) 미세패턴 형성방법
US4576903A (en) Developer for positive photoresists
JP3805373B2 (ja) キレート形成性イオン交換樹脂によってフォトレジスト組成物中の金属イオンを低減させる方法
JP2572069B2 (ja) 安定化コリン塩基溶液
EP0677183A1 (en) PROCESS FOR PRODUCING A DEVELOPER HAVING A LOW LEVEL OF METAL IONS.
CN85107347A (zh) 高反差正性光致抗蚀剂显影的方法
JPS64689B2 (enrdf_load_stackoverflow)
KR100421270B1 (ko) 금속이온함량이낮은4,4'-[1-[4-[1-(4-히드록시페닐)-1-메틸에틸]페닐]에틸리덴]비스페놀및이것으로제조한포토레지스트조성물
JPH0210350A (ja) ポジ型フォトレジスト
JPS6362593B2 (enrdf_load_stackoverflow)
JP3924317B2 (ja) 陰イオン交換樹脂を使用する、ノボラック樹脂溶液中の金属イオン低減
KR100477401B1 (ko) 이온 교환에 의해 유기 극성 용제를 함유하는 포토레지스트 조성물내의 금속 이온 오염물을 감소시키는 방법
JPH02115853A (ja) 半導体装置の製造方法
US4822722A (en) Process of using high contrast photoresist developer with enhanced sensitivity to form positive resist image
EP0129106B1 (en) High contrast photoresist developer
JPS6248211B2 (enrdf_load_stackoverflow)
JP2000505913A (ja) ２，４―ジニトロ―１―ナフトールを含有するポジ型フォトレジスト組成物
US4931103A (en) Tricholine phosphate surface treating agent
JPS5833246A (ja) ポジ型レジストのパタ−ン形成方法
JPS6048023B2 (ja) ポジ型レジスト
JPH0252357A (ja) パターン形成方法
JPS62138843A (ja) 複合レジスト構造体