JPS6362095B2 - - Google Patents
Info
- Publication number
- JPS6362095B2 JPS6362095B2 JP56167388A JP16738881A JPS6362095B2 JP S6362095 B2 JPS6362095 B2 JP S6362095B2 JP 56167388 A JP56167388 A JP 56167388A JP 16738881 A JP16738881 A JP 16738881A JP S6362095 B2 JPS6362095 B2 JP S6362095B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- semiconductor crystal
- insulating film
- reaction tube
- phosphoryl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 54
- 239000004065 semiconductor Substances 0.000 claims description 54
- 238000006243 chemical reaction Methods 0.000 claims description 23
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 21
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 20
- -1 phosphoryl nitride Chemical class 0.000 claims description 14
- 229910021529 ammonia Inorganic materials 0.000 claims description 11
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 claims description 9
- 238000010574 gas phase reaction Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 47
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 150000002431 hydrogen Chemical class 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 230000005669 field effect Effects 0.000 description 7
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 6
- DMSZORWOGDLWGN-UHFFFAOYSA-N ctk1a3526 Chemical compound NP(N)(N)=O DMSZORWOGDLWGN-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56167388A JPS5868935A (ja) | 1981-10-20 | 1981-10-20 | 半導体結晶上への絶縁膜の形成法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56167388A JPS5868935A (ja) | 1981-10-20 | 1981-10-20 | 半導体結晶上への絶縁膜の形成法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5868935A JPS5868935A (ja) | 1983-04-25 |
| JPS6362095B2 true JPS6362095B2 (enExample) | 1988-12-01 |
Family
ID=15848774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56167388A Granted JPS5868935A (ja) | 1981-10-20 | 1981-10-20 | 半導体結晶上への絶縁膜の形成法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5868935A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0535094U (ja) * | 1991-10-14 | 1993-05-14 | 敦子 加川 | カバー付き物干し器 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006321564A (ja) * | 2006-06-21 | 2006-11-30 | Denki Kagaku Kogyo Kk | 熱可塑性樹脂シート |
-
1981
- 1981-10-20 JP JP56167388A patent/JPS5868935A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0535094U (ja) * | 1991-10-14 | 1993-05-14 | 敦子 加川 | カバー付き物干し器 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5868935A (ja) | 1983-04-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6362095B2 (enExample) | ||
| GB1265932A (enExample) | ||
| JPS6126216A (ja) | 化合物半導体の成長方法 | |
| US3614829A (en) | Method of forming high stability self-registered field effect transistors | |
| JPS5863139A (ja) | 半導体結晶上への絶縁膜の形成法 | |
| JPS5868936A (ja) | 半導体結晶上への絶縁膜の形成法 | |
| JPS5868937A (ja) | 半導体結晶上への絶縁膜の形成法 | |
| JPS62160718A (ja) | 半導体デバイスの製造方法 | |
| JP2842088B2 (ja) | ゲート絶縁膜の製造方法 | |
| KR100244400B1 (ko) | 유전체막 형성방법 | |
| JP2001085424A (ja) | 半導体装置の製造方法 | |
| KR970011647B1 (ko) | 반도체 소자의 게이트 산화막 형성방법 | |
| JPH01300528A (ja) | 薄膜形成方法 | |
| JPS62124736A (ja) | シリコン薄膜およびその作成方法 | |
| JP2776109B2 (ja) | 半導体装置の製造方法 | |
| KR960009979B1 (ko) | 게이트산화막 제조방법 | |
| JPH03220763A (ja) | 半導体装置の製造方法 | |
| KR0127316B1 (ko) | 다결정실리콘의 산화막 형성방법 | |
| JPH0154866B2 (enExample) | ||
| JPS5814739B2 (ja) | ハンドウタイソウチノセイゾウホウホウ | |
| JPH01191412A (ja) | 半導体装置の製造方法 | |
| JPH0555198A (ja) | 半導体装置の製造方法 | |
| KR100451507B1 (ko) | 반도체 소자의 제조방법 | |
| JPH01232768A (ja) | 半導体装置の製造方法 | |
| JPS6214941B2 (enExample) |