JPS6359272B2 - - Google Patents
Info
- Publication number
- JPS6359272B2 JPS6359272B2 JP57212957A JP21295782A JPS6359272B2 JP S6359272 B2 JPS6359272 B2 JP S6359272B2 JP 57212957 A JP57212957 A JP 57212957A JP 21295782 A JP21295782 A JP 21295782A JP S6359272 B2 JPS6359272 B2 JP S6359272B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- semiconductor
- superconducting element
- present
- superconducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57212957A JPS59103389A (ja) | 1982-12-04 | 1982-12-04 | 超伝導素子及びその製法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57212957A JPS59103389A (ja) | 1982-12-04 | 1982-12-04 | 超伝導素子及びその製法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59103389A JPS59103389A (ja) | 1984-06-14 |
| JPS6359272B2 true JPS6359272B2 (OSRAM) | 1988-11-18 |
Family
ID=16631085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57212957A Granted JPS59103389A (ja) | 1982-12-04 | 1982-12-04 | 超伝導素子及びその製法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59103389A (OSRAM) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3373167D1 (en) * | 1983-12-28 | 1987-09-24 | Ibm | Low temperature tunneling transistor |
| JPH069261B2 (ja) * | 1984-08-03 | 1994-02-02 | 日本電信電話株式会社 | 半導体結合超伝導素子 |
| EP0181191B1 (en) * | 1984-11-05 | 1996-02-28 | Hitachi, Ltd. | Superconducting device |
| JP2568995B2 (ja) * | 1985-02-20 | 1997-01-08 | 株式会社日立製作所 | 超電導素子 |
| JPS61242082A (ja) * | 1985-04-19 | 1986-10-28 | Nippon Telegr & Teleph Corp <Ntt> | 半導体素子 |
| JP2651143B2 (ja) * | 1987-01-19 | 1997-09-10 | 株式会社日立製作所 | 超伝導トランジスタ |
| FR2611300B1 (fr) * | 1987-02-20 | 1989-04-21 | Labo Electronique Physique | Circuit de stockage d'informations a faible temps d'acces |
| JPS63280473A (ja) * | 1987-05-12 | 1988-11-17 | Mitsubishi Electric Corp | スイッチング素子 |
| FR3126592B1 (fr) * | 2021-08-31 | 2024-03-08 | Commissariat Energie Atomique | Transistor à effet Josephson |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5776879A (en) * | 1980-10-31 | 1982-05-14 | Hitachi Ltd | Semiconductor device |
-
1982
- 1982-12-04 JP JP57212957A patent/JPS59103389A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59103389A (ja) | 1984-06-14 |
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