JPS6359258B2 - - Google Patents
Info
- Publication number
- JPS6359258B2 JPS6359258B2 JP54126574A JP12657479A JPS6359258B2 JP S6359258 B2 JPS6359258 B2 JP S6359258B2 JP 54126574 A JP54126574 A JP 54126574A JP 12657479 A JP12657479 A JP 12657479A JP S6359258 B2 JPS6359258 B2 JP S6359258B2
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- semiconductor
- type region
- opposite conductivity
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12657479A JPS5650527A (en) | 1979-09-29 | 1979-09-29 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12657479A JPS5650527A (en) | 1979-09-29 | 1979-09-29 | Semiconductor integrated circuit device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5650527A JPS5650527A (en) | 1981-05-07 |
JPS6359258B2 true JPS6359258B2 (enrdf_load_stackoverflow) | 1988-11-18 |
Family
ID=14938527
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12657479A Granted JPS5650527A (en) | 1979-09-29 | 1979-09-29 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5650527A (enrdf_load_stackoverflow) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5276346A (en) * | 1983-12-26 | 1994-01-04 | Hitachi, Ltd. | Semiconductor integrated circuit device having protective/output elements and internal circuits |
US5610089A (en) * | 1983-12-26 | 1997-03-11 | Hitachi, Ltd. | Method of fabrication of semiconductor integrated circuit device |
JPS61195721A (ja) * | 1985-02-26 | 1986-08-30 | Nisshinbo Ind Inc | Ncシ−ト材加工機 |
US5371395A (en) * | 1992-05-06 | 1994-12-06 | Xerox Corporation | High voltage input pad protection circuitry |
US5545910A (en) * | 1994-04-13 | 1996-08-13 | Winbond Electronics Corp. | ESD proctection device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NO133266C (enrdf_load_stackoverflow) * | 1974-03-19 | 1976-04-07 | Norsk Hydro As | |
JPS5324157A (en) * | 1976-08-18 | 1978-03-06 | Sanyo Electric Co Ltd | Control circuit of air conditioner |
JPS5365081A (en) * | 1976-11-22 | 1978-06-10 | Nec Corp | Field effect semiconductor device |
-
1979
- 1979-09-29 JP JP12657479A patent/JPS5650527A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5650527A (en) | 1981-05-07 |
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