JPS6355873B2 - - Google Patents

Info

Publication number
JPS6355873B2
JPS6355873B2 JP57217519A JP21751982A JPS6355873B2 JP S6355873 B2 JPS6355873 B2 JP S6355873B2 JP 57217519 A JP57217519 A JP 57217519A JP 21751982 A JP21751982 A JP 21751982A JP S6355873 B2 JPS6355873 B2 JP S6355873B2
Authority
JP
Japan
Prior art keywords
semiconductor layer
semiconductor
layer
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57217519A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59106160A (ja
Inventor
Kunihiko Uei
Takashi Fukui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57217519A priority Critical patent/JPS59106160A/ja
Publication of JPS59106160A publication Critical patent/JPS59106160A/ja
Publication of JPS6355873B2 publication Critical patent/JPS6355873B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP57217519A 1982-12-11 1982-12-11 電界効果トランジスタ Granted JPS59106160A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57217519A JPS59106160A (ja) 1982-12-11 1982-12-11 電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57217519A JPS59106160A (ja) 1982-12-11 1982-12-11 電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS59106160A JPS59106160A (ja) 1984-06-19
JPS6355873B2 true JPS6355873B2 (enExample) 1988-11-04

Family

ID=16705506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57217519A Granted JPS59106160A (ja) 1982-12-11 1982-12-11 電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS59106160A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4590507A (en) * 1984-07-31 1986-05-20 At&T Bell Laboratories Variable gap devices
JPS63187667A (ja) * 1987-01-30 1988-08-03 Hitachi Ltd 半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5730374A (en) * 1980-07-29 1982-02-18 Fujitsu Ltd Semiconductor device and manufacture thereof
JPS58147158A (ja) * 1982-02-26 1983-09-01 Oki Electric Ind Co Ltd 化合物半導体電界効果トランジスタ

Also Published As

Publication number Publication date
JPS59106160A (ja) 1984-06-19

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