JPS6355223B2 - - Google Patents
Info
- Publication number
- JPS6355223B2 JPS6355223B2 JP55147830A JP14783080A JPS6355223B2 JP S6355223 B2 JPS6355223 B2 JP S6355223B2 JP 55147830 A JP55147830 A JP 55147830A JP 14783080 A JP14783080 A JP 14783080A JP S6355223 B2 JPS6355223 B2 JP S6355223B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- collector
- conductivity type
- base
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/108—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having localised breakdown regions, e.g. built-in avalanching regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55147830A JPS5771176A (en) | 1980-10-22 | 1980-10-22 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55147830A JPS5771176A (en) | 1980-10-22 | 1980-10-22 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5771176A JPS5771176A (en) | 1982-05-01 |
JPS6355223B2 true JPS6355223B2 (enrdf_load_stackoverflow) | 1988-11-01 |
Family
ID=15439198
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55147830A Granted JPS5771176A (en) | 1980-10-22 | 1980-10-22 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5771176A (enrdf_load_stackoverflow) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5013076A (enrdf_load_stackoverflow) * | 1973-06-04 | 1975-02-10 |
-
1980
- 1980-10-22 JP JP55147830A patent/JPS5771176A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5771176A (en) | 1982-05-01 |
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