JPS6350390A - 単結晶の成長方法 - Google Patents

単結晶の成長方法

Info

Publication number
JPS6350390A
JPS6350390A JP19200786A JP19200786A JPS6350390A JP S6350390 A JPS6350390 A JP S6350390A JP 19200786 A JP19200786 A JP 19200786A JP 19200786 A JP19200786 A JP 19200786A JP S6350390 A JPS6350390 A JP S6350390A
Authority
JP
Japan
Prior art keywords
crucible
melt
pulling
crystal
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19200786A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0477708B2 (enrdf_load_stackoverflow
Inventor
Kazuhiro Yamada
一博 山田
Sadao Matsumura
禎夫 松村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP19200786A priority Critical patent/JPS6350390A/ja
Publication of JPS6350390A publication Critical patent/JPS6350390A/ja
Publication of JPH0477708B2 publication Critical patent/JPH0477708B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP19200786A 1986-08-19 1986-08-19 単結晶の成長方法 Granted JPS6350390A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19200786A JPS6350390A (ja) 1986-08-19 1986-08-19 単結晶の成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19200786A JPS6350390A (ja) 1986-08-19 1986-08-19 単結晶の成長方法

Publications (2)

Publication Number Publication Date
JPS6350390A true JPS6350390A (ja) 1988-03-03
JPH0477708B2 JPH0477708B2 (enrdf_load_stackoverflow) 1992-12-09

Family

ID=16284051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19200786A Granted JPS6350390A (ja) 1986-08-19 1986-08-19 単結晶の成長方法

Country Status (1)

Country Link
JP (1) JPS6350390A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007240037A (ja) * 2006-03-07 2007-09-20 Ulvac Materials Inc 金属坩堝
JP2009097734A (ja) * 2007-10-12 2009-05-07 Fuji Denki Thermosystems Kk 誘導加熱装置
CN108456927A (zh) * 2018-04-24 2018-08-28 安徽晶宸科技有限公司 一种大尺寸LiTaO3晶体的全自动控制晶体生长方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5765805B2 (ja) * 2011-06-02 2015-08-19 信越化学工業株式会社 イリジウムルツボ及びそれを用いたタンタル酸リチウム単結晶の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007240037A (ja) * 2006-03-07 2007-09-20 Ulvac Materials Inc 金属坩堝
JP2009097734A (ja) * 2007-10-12 2009-05-07 Fuji Denki Thermosystems Kk 誘導加熱装置
CN108456927A (zh) * 2018-04-24 2018-08-28 安徽晶宸科技有限公司 一种大尺寸LiTaO3晶体的全自动控制晶体生长方法

Also Published As

Publication number Publication date
JPH0477708B2 (enrdf_load_stackoverflow) 1992-12-09

Similar Documents

Publication Publication Date Title
JPS6350390A (ja) 単結晶の成長方法
US6899761B2 (en) Single crystals of lead magnesium niobate-lead titanate
JPS6287489A (ja) るつぼの回収方法及び装置
JPH08175896A (ja) 単結晶の製造方法及び装置
JP3050120B2 (ja) 単結晶引き上げ用種結晶及び該種結晶を用いた単結晶引き上げ方法
JP2019147698A (ja) 結晶育成装置及び結晶育成方法
JPS5825078B2 (ja) 単結晶の製造方法
JP2713986B2 (ja) 酸化物単結晶の製造装置
JPH01317188A (ja) 半導体単結晶の製造方法及び装置
JP2957857B2 (ja) 酸化物単結晶の製造方法
JPH10338593A (ja) 引き上げ法による単結晶育成用の貴金属ルツボ
JPH04285091A (ja) 酸化物単結晶の製造装置
JPH07157389A (ja) 単結晶育成後の残留原料の固化方法
JP3832527B2 (ja) 単結晶の製造方法
JP4413055B2 (ja) シリコン単結晶製造方法
JP7023458B2 (ja) 単結晶育成方法
JPH0920596A (ja) 四ほう酸リチウム単結晶の製造装置
JP6992488B2 (ja) 単結晶育成用ルツボ
JP5765805B2 (ja) イリジウムルツボ及びそれを用いたタンタル酸リチウム単結晶の製造方法
JPS63159287A (ja) シリコン単結晶の製造方法
JPH0859387A (ja) 単結晶引き上げ用黒鉛部品
JPS60255690A (ja) 半導体結晶の製造方法
JPS597674B2 (ja) 酸化物圧電体単結晶の製造方法
JP2000185920A (ja) 酸化物多結晶の製造方法およびその装置
JPH09169592A (ja) 単結晶育成方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term