JPS6349908B2 - - Google Patents

Info

Publication number
JPS6349908B2
JPS6349908B2 JP56101408A JP10140881A JPS6349908B2 JP S6349908 B2 JPS6349908 B2 JP S6349908B2 JP 56101408 A JP56101408 A JP 56101408A JP 10140881 A JP10140881 A JP 10140881A JP S6349908 B2 JPS6349908 B2 JP S6349908B2
Authority
JP
Japan
Prior art keywords
region
electrode
field effect
insulated
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56101408A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5745268A (en
Inventor
Senperu Adorianusu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPS5745268A publication Critical patent/JPS5745268A/ja
Publication of JPS6349908B2 publication Critical patent/JPS6349908B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP56101408A 1980-07-04 1981-07-01 Field effect condenser Granted JPS5745268A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8003874A NL8003874A (nl) 1980-07-04 1980-07-04 Veldeffektcapaciteit.

Publications (2)

Publication Number Publication Date
JPS5745268A JPS5745268A (en) 1982-03-15
JPS6349908B2 true JPS6349908B2 (en, 2012) 1988-10-06

Family

ID=19835566

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56101408A Granted JPS5745268A (en) 1980-07-04 1981-07-01 Field effect condenser

Country Status (8)

Country Link
US (1) US4453090A (en, 2012)
JP (1) JPS5745268A (en, 2012)
CA (1) CA1160760A (en, 2012)
DE (1) DE3124237A1 (en, 2012)
FR (1) FR2486310A1 (en, 2012)
GB (1) GB2079535B (en, 2012)
IT (1) IT1138000B (en, 2012)
NL (1) NL8003874A (en, 2012)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6068662U (ja) * 1983-10-17 1985-05-15 三洋電機株式会社 集積化コンデンサ
US4591738A (en) * 1983-10-27 1986-05-27 International Business Machines Corporation Charge pumping circuit
US4758873A (en) * 1986-05-16 1988-07-19 National Semiconductor Corporation Balanced MOS capacitor with low stray capacitance and high ESD survival
US4786828A (en) * 1987-05-15 1988-11-22 Hoffman Charles R Bias scheme for achieving voltage independent capacitance
JP3039930B2 (ja) * 1988-06-24 2000-05-08 株式会社日立製作所 Ｍｉｓ容量の接続方法
FR2694450B1 (fr) * 1992-07-30 1994-10-21 Sgs Thomson Microelectronics Condensateur en technologie CMOS.
FR2713399B1 (fr) * 1993-12-01 1996-03-01 Matra Mhs Dispositif de réduction du niveau de bruit d'un circuit intégré à plusieurs niveaux de conducteurs.
US5748035A (en) * 1994-05-27 1998-05-05 Arithmos, Inc. Channel coupled feedback circuits
DE4447307A1 (de) * 1994-12-31 1996-07-04 Bosch Gmbh Robert Schaltungsanordnung zur Verminderung der Spannungsabhängigkeit einer MOS-Kapazität
US5724095A (en) * 1995-10-03 1998-03-03 Omnivision Technologies Inc. Charge amplifier for MOS imaging array and method of making same
US5714907A (en) * 1996-07-29 1998-02-03 Intel Corporation Apparatus for providing digitally-adjustable floating MOS capacitance
US5926064A (en) * 1998-01-23 1999-07-20 National Semiconductor Corporation Floating MOS capacitor
US6010939A (en) 1998-03-31 2000-01-04 Vlsi Technology, Inc. Methods for making shallow trench capacitive structures
US6020616A (en) * 1998-03-31 2000-02-01 Vlsi Technology, Inc. Automated design of on-chip capacitive structures for suppressing inductive noise
WO2001024277A1 (de) 1999-09-30 2001-04-05 Infineon Technologies Ag Schaltungsanordnung zur bildung eines mos-kondensators mit geringer spannungsabhängigkeit und geringem flächenbedarf
DE19961487B4 (de) * 1999-09-30 2005-08-04 Infineon Technologies Ag Schaltungsanordnung zur Bildung eines MOS-Kondensators mit geringer Spannungsabhängigkeit und geringem Flächenbedarf
JP4252539B2 (ja) * 2003-03-03 2009-04-08 富士通マイクロエレクトロニクス株式会社 Ｍｏｓ型可変容量素子
JP2006005089A (ja) * 2004-06-16 2006-01-05 Fujitsu Ltd 半導体装置
US7728362B2 (en) 2006-01-20 2010-06-01 International Business Machines Corporation Creating integrated circuit capacitance from gate array structures
TWI330946B (en) * 2007-03-12 2010-09-21 Via Tech Inc Phase-locked loop and compound mos capacitor thereof
US10892260B2 (en) * 2019-03-06 2021-01-12 Himax Technologies Limited Capacitor

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3285074A (en) * 1964-09-08 1966-11-15 Cons Electrodynamics Corp Amplitude damped transducer
US3407339A (en) * 1966-05-02 1968-10-22 North American Rockwell Voltage protection device utilizing a field effect transistor
US3983414A (en) * 1975-02-10 1976-09-28 Fairchild Camera And Instrument Corporation Charge cancelling structure and method for integrated circuits
FR2326761A1 (fr) * 1975-09-30 1977-04-29 Siemens Ag Memoire d'informations pour la memorisation d'informations sous forme de porteurs de charge electriques et procede pour sa mise en oeuvre
JPS52102690A (en) * 1976-02-25 1977-08-29 Hitachi Ltd Semiconductor capacitance device
DE2826192C2 (de) * 1978-06-15 1984-10-18 Philips Patentverwaltung Gmbh, 2000 Hamburg Schaltungsanordnung mit einem Halbleiterbauelement mit einer MOS-Kapazität
US4198580A (en) * 1978-05-30 1980-04-15 National Semiconductor Corporation MOSFET switching device with charge cancellation
US4384300A (en) * 1978-06-21 1983-05-17 Tokyo Shibaura Denki Kabushiki Kaisha Negative resistance device
JPS5939904B2 (ja) * 1978-09-28 1984-09-27 株式会社東芝 半導体装置
DE2842587A1 (de) * 1978-09-29 1980-04-17 Siemens Ag Isolierschichtkondensator

Also Published As

Publication number Publication date
US4453090A (en) 1984-06-05
CA1160760A (en) 1984-01-17
GB2079535B (en) 1984-03-28
FR2486310B1 (en, 2012) 1984-12-28
IT8122671A0 (it) 1981-07-01
FR2486310A1 (fr) 1982-01-08
IT1138000B (it) 1986-09-10
NL8003874A (nl) 1982-02-01
GB2079535A (en) 1982-01-20
DE3124237A1 (de) 1982-06-16
JPS5745268A (en) 1982-03-15

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