IT1138000B - Capacita' ad effetto di campo - Google Patents
Capacita' ad effetto di campoInfo
- Publication number
- IT1138000B IT1138000B IT22671/81A IT2267181A IT1138000B IT 1138000 B IT1138000 B IT 1138000B IT 22671/81 A IT22671/81 A IT 22671/81A IT 2267181 A IT2267181 A IT 2267181A IT 1138000 B IT1138000 B IT 1138000B
- Authority
- IT
- Italy
- Prior art keywords
- field effect
- effect capacity
- capacity
- field
- effect
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8003874A NL8003874A (nl) | 1980-07-04 | 1980-07-04 | Veldeffektcapaciteit. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8122671A0 IT8122671A0 (it) | 1981-07-01 |
| IT1138000B true IT1138000B (it) | 1986-09-10 |
Family
ID=19835566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT22671/81A IT1138000B (it) | 1980-07-04 | 1981-07-01 | Capacita' ad effetto di campo |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4453090A (en, 2012) |
| JP (1) | JPS5745268A (en, 2012) |
| CA (1) | CA1160760A (en, 2012) |
| DE (1) | DE3124237A1 (en, 2012) |
| FR (1) | FR2486310A1 (en, 2012) |
| GB (1) | GB2079535B (en, 2012) |
| IT (1) | IT1138000B (en, 2012) |
| NL (1) | NL8003874A (en, 2012) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6068662U (ja) * | 1983-10-17 | 1985-05-15 | 三洋電機株式会社 | 集積化コンデンサ |
| US4591738A (en) * | 1983-10-27 | 1986-05-27 | International Business Machines Corporation | Charge pumping circuit |
| US4758873A (en) * | 1986-05-16 | 1988-07-19 | National Semiconductor Corporation | Balanced MOS capacitor with low stray capacitance and high ESD survival |
| US4786828A (en) * | 1987-05-15 | 1988-11-22 | Hoffman Charles R | Bias scheme for achieving voltage independent capacitance |
| JP3039930B2 (ja) * | 1988-06-24 | 2000-05-08 | 株式会社日立製作所 | Ｍｉｓ容量の接続方法 |
| FR2694450B1 (fr) * | 1992-07-30 | 1994-10-21 | Sgs Thomson Microelectronics | Condensateur en technologie CMOS. |
| FR2713399B1 (fr) * | 1993-12-01 | 1996-03-01 | Matra Mhs | Dispositif de réduction du niveau de bruit d'un circuit intégré à plusieurs niveaux de conducteurs. |
| US5748035A (en) * | 1994-05-27 | 1998-05-05 | Arithmos, Inc. | Channel coupled feedback circuits |
| DE4447307A1 (de) * | 1994-12-31 | 1996-07-04 | Bosch Gmbh Robert | Schaltungsanordnung zur Verminderung der Spannungsabhängigkeit einer MOS-Kapazität |
| US5724095A (en) * | 1995-10-03 | 1998-03-03 | Omnivision Technologies Inc. | Charge amplifier for MOS imaging array and method of making same |
| US5714907A (en) * | 1996-07-29 | 1998-02-03 | Intel Corporation | Apparatus for providing digitally-adjustable floating MOS capacitance |
| US5926064A (en) * | 1998-01-23 | 1999-07-20 | National Semiconductor Corporation | Floating MOS capacitor |
| US6010939A (en) | 1998-03-31 | 2000-01-04 | Vlsi Technology, Inc. | Methods for making shallow trench capacitive structures |
| US6020616A (en) * | 1998-03-31 | 2000-02-01 | Vlsi Technology, Inc. | Automated design of on-chip capacitive structures for suppressing inductive noise |
| WO2001024277A1 (de) | 1999-09-30 | 2001-04-05 | Infineon Technologies Ag | Schaltungsanordnung zur bildung eines mos-kondensators mit geringer spannungsabhängigkeit und geringem flächenbedarf |
| DE19961487B4 (de) * | 1999-09-30 | 2005-08-04 | Infineon Technologies Ag | Schaltungsanordnung zur Bildung eines MOS-Kondensators mit geringer Spannungsabhängigkeit und geringem Flächenbedarf |
| JP4252539B2 (ja) * | 2003-03-03 | 2009-04-08 | 富士通マイクロエレクトロニクス株式会社 | Ｍｏｓ型可変容量素子 |
| JP2006005089A (ja) * | 2004-06-16 | 2006-01-05 | Fujitsu Ltd | 半導体装置 |
| US7728362B2 (en) | 2006-01-20 | 2010-06-01 | International Business Machines Corporation | Creating integrated circuit capacitance from gate array structures |
| TWI330946B (en) * | 2007-03-12 | 2010-09-21 | Via Tech Inc | Phase-locked loop and compound mos capacitor thereof |
| US10892260B2 (en) * | 2019-03-06 | 2021-01-12 | Himax Technologies Limited | Capacitor |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3285074A (en) * | 1964-09-08 | 1966-11-15 | Cons Electrodynamics Corp | Amplitude damped transducer |
| US3407339A (en) * | 1966-05-02 | 1968-10-22 | North American Rockwell | Voltage protection device utilizing a field effect transistor |
| US3983414A (en) * | 1975-02-10 | 1976-09-28 | Fairchild Camera And Instrument Corporation | Charge cancelling structure and method for integrated circuits |
| FR2326761A1 (fr) * | 1975-09-30 | 1977-04-29 | Siemens Ag | Memoire d'informations pour la memorisation d'informations sous forme de porteurs de charge electriques et procede pour sa mise en oeuvre |
| JPS52102690A (en) * | 1976-02-25 | 1977-08-29 | Hitachi Ltd | Semiconductor capacitance device |
| DE2826192C2 (de) * | 1978-06-15 | 1984-10-18 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Schaltungsanordnung mit einem Halbleiterbauelement mit einer MOS-Kapazität |
| US4198580A (en) * | 1978-05-30 | 1980-04-15 | National Semiconductor Corporation | MOSFET switching device with charge cancellation |
| US4384300A (en) * | 1978-06-21 | 1983-05-17 | Tokyo Shibaura Denki Kabushiki Kaisha | Negative resistance device |
| JPS5939904B2 (ja) * | 1978-09-28 | 1984-09-27 | 株式会社東芝 | 半導体装置 |
| DE2842587A1 (de) * | 1978-09-29 | 1980-04-17 | Siemens Ag | Isolierschichtkondensator |
-
1980
- 1980-07-04 NL NL8003874A patent/NL8003874A/nl not_active Application Discontinuation
-
1981
- 1981-06-11 US US06/272,459 patent/US4453090A/en not_active Expired - Fee Related
- 1981-06-20 DE DE19813124237 patent/DE3124237A1/de not_active Withdrawn
- 1981-06-30 CA CA000380899A patent/CA1160760A/en not_active Expired
- 1981-07-01 IT IT22671/81A patent/IT1138000B/it active
- 1981-07-01 FR FR8112940A patent/FR2486310A1/fr active Granted
- 1981-07-01 GB GB8120268A patent/GB2079535B/en not_active Expired
- 1981-07-01 JP JP56101408A patent/JPS5745268A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| US4453090A (en) | 1984-06-05 |
| CA1160760A (en) | 1984-01-17 |
| GB2079535B (en) | 1984-03-28 |
| FR2486310B1 (en, 2012) | 1984-12-28 |
| IT8122671A0 (it) | 1981-07-01 |
| JPS6349908B2 (en, 2012) | 1988-10-06 |
| FR2486310A1 (fr) | 1982-01-08 |
| NL8003874A (nl) | 1982-02-01 |
| GB2079535A (en) | 1982-01-20 |
| DE3124237A1 (de) | 1982-06-16 |
| JPS5745268A (en) | 1982-03-15 |
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