JPS6348832A - Ｃｖｄ装置 - Google Patents
Ｃｖｄ装置Info
- Publication number
- JPS6348832A JPS6348832A JP19339386A JP19339386A JPS6348832A JP S6348832 A JPS6348832 A JP S6348832A JP 19339386 A JP19339386 A JP 19339386A JP 19339386 A JP19339386 A JP 19339386A JP S6348832 A JPS6348832 A JP S6348832A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- cleaning
- etching plasma
- quartz
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 41
- 238000005530 etching Methods 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 6
- 239000012495 reaction gas Substances 0.000 claims abstract description 4
- 239000010453 quartz Substances 0.000 abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 20
- 239000000126 substance Substances 0.000 abstract description 11
- 238000001312 dry etching Methods 0.000 abstract description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 4
- 229920005591 polysilicon Polymers 0.000 abstract description 4
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 abstract description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 abstract 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 abstract 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910001415 sodium ion Inorganic materials 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 241000981595 Zoysia japonica Species 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19339386A JPS6348832A (ja) | 1986-08-19 | 1986-08-19 | Ｃｖｄ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19339386A JPS6348832A (ja) | 1986-08-19 | 1986-08-19 | Ｃｖｄ装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29816494A Division JPH0828338B2 (ja) | 1994-12-01 | 1994-12-01 | Ｃｖｄ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6348832A true JPS6348832A (ja) | 1988-03-01 |
| JPH0588539B2 JPH0588539B2 (enExample) | 1993-12-22 |
Family
ID=16307195
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19339386A Granted JPS6348832A (ja) | 1986-08-19 | 1986-08-19 | Ｃｖｄ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6348832A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0354175A (ja) * | 1989-07-21 | 1991-03-08 | Sumitomo Metal Mining Co Ltd | 耐凍害性に優れた軽量気泡コンクリート |
| US6125859A (en) * | 1997-03-05 | 2000-10-03 | Applied Materials, Inc. | Method for improved cleaning of substrate processing systems |
| US6274058B1 (en) | 1997-07-11 | 2001-08-14 | Applied Materials, Inc. | Remote plasma cleaning method for processing chambers |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5615044A (en) * | 1979-07-18 | 1981-02-13 | Toshiba Corp | Plasma cleaning method |
| JPS57134925A (en) * | 1981-02-16 | 1982-08-20 | Kokusai Electric Co Ltd | Plasma cvd film producer |
| JPS5846639A (ja) * | 1981-09-14 | 1983-03-18 | Hitachi Ltd | プラズマ処理装置 |
| JPS58209111A (ja) * | 1982-05-31 | 1983-12-06 | Toshiba Corp | プラズマ発生装置 |
| JPS60110123A (ja) * | 1983-11-18 | 1985-06-15 | Semiconductor Energy Lab Co Ltd | 半導体エッチング方法 |
| JPS6167920A (ja) * | 1984-09-11 | 1986-04-08 | Ushio Inc | 光化学反応装置 |
| JPS6177379A (ja) * | 1984-09-21 | 1986-04-19 | Nippon Pillar Packing Co Ltd | ガスレ−ザ−管 |
| JPS61216327A (ja) * | 1985-03-22 | 1986-09-26 | Hitachi Ltd | プラズマ処理方法及び装置 |
| JPS6324826U (enExample) * | 1986-07-31 | 1988-02-18 |
-
1986
- 1986-08-19 JP JP19339386A patent/JPS6348832A/ja active Granted
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5615044A (en) * | 1979-07-18 | 1981-02-13 | Toshiba Corp | Plasma cleaning method |
| JPS57134925A (en) * | 1981-02-16 | 1982-08-20 | Kokusai Electric Co Ltd | Plasma cvd film producer |
| JPS5846639A (ja) * | 1981-09-14 | 1983-03-18 | Hitachi Ltd | プラズマ処理装置 |
| JPS58209111A (ja) * | 1982-05-31 | 1983-12-06 | Toshiba Corp | プラズマ発生装置 |
| JPS60110123A (ja) * | 1983-11-18 | 1985-06-15 | Semiconductor Energy Lab Co Ltd | 半導体エッチング方法 |
| JPS6167920A (ja) * | 1984-09-11 | 1986-04-08 | Ushio Inc | 光化学反応装置 |
| JPS6177379A (ja) * | 1984-09-21 | 1986-04-19 | Nippon Pillar Packing Co Ltd | ガスレ−ザ−管 |
| JPS61216327A (ja) * | 1985-03-22 | 1986-09-26 | Hitachi Ltd | プラズマ処理方法及び装置 |
| JPS6324826U (enExample) * | 1986-07-31 | 1988-02-18 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0354175A (ja) * | 1989-07-21 | 1991-03-08 | Sumitomo Metal Mining Co Ltd | 耐凍害性に優れた軽量気泡コンクリート |
| US6125859A (en) * | 1997-03-05 | 2000-10-03 | Applied Materials, Inc. | Method for improved cleaning of substrate processing systems |
| US6274058B1 (en) | 1997-07-11 | 2001-08-14 | Applied Materials, Inc. | Remote plasma cleaning method for processing chambers |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0588539B2 (enExample) | 1993-12-22 |
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