JPS6347335B2 - - Google Patents
Info
- Publication number
- JPS6347335B2 JPS6347335B2 JP58127987A JP12798783A JPS6347335B2 JP S6347335 B2 JPS6347335 B2 JP S6347335B2 JP 58127987 A JP58127987 A JP 58127987A JP 12798783 A JP12798783 A JP 12798783A JP S6347335 B2 JPS6347335 B2 JP S6347335B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor substrate
- groove
- etching
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P50/692—
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58127987A JPS6021540A (ja) | 1983-07-15 | 1983-07-15 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58127987A JPS6021540A (ja) | 1983-07-15 | 1983-07-15 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6021540A JPS6021540A (ja) | 1985-02-02 |
| JPS6347335B2 true JPS6347335B2 (OSRAM) | 1988-09-21 |
Family
ID=14973641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58127987A Granted JPS6021540A (ja) | 1983-07-15 | 1983-07-15 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6021540A (OSRAM) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2870054B2 (ja) * | 1989-10-25 | 1999-03-10 | ソニー株式会社 | 半導体装置の製造方法 |
| RU2204181C2 (ru) * | 1997-01-21 | 2003-05-10 | Джорджиэ Тек Рисеч Копэрейшн | Полупроводниковое устройство (варианты) и способ формирования воздушных зазоров внутри структуры (варианты) |
| US6133615A (en) * | 1998-04-13 | 2000-10-17 | Wisconsin Alumni Research Foundation | Photodiode arrays having minimized cross-talk between diodes |
| DE19958904C2 (de) | 1999-12-07 | 2002-01-24 | Infineon Technologies Ag | Verfahren zur Herstellung einer Hartmaske auf einem Substrat |
| JP6278608B2 (ja) * | 2013-04-08 | 2018-02-14 | キヤノン株式会社 | 半導体装置およびその製造方法 |
-
1983
- 1983-07-15 JP JP58127987A patent/JPS6021540A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6021540A (ja) | 1985-02-02 |
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