JPS6347141B2 - - Google Patents
Info
- Publication number
- JPS6347141B2 JPS6347141B2 JP56036385A JP3638581A JPS6347141B2 JP S6347141 B2 JPS6347141 B2 JP S6347141B2 JP 56036385 A JP56036385 A JP 56036385A JP 3638581 A JP3638581 A JP 3638581A JP S6347141 B2 JPS6347141 B2 JP S6347141B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- gas
- raw material
- film
- generation region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002994 raw material Substances 0.000 claims description 15
- 230000005684 electric field Effects 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 5
- 238000000927 vapour-phase epitaxy Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 23
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 239000000203 mixture Substances 0.000 description 6
- 238000000678 plasma activation Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000001994 activation Methods 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56036385A JPS57167631A (en) | 1981-03-13 | 1981-03-13 | Plasma vapor-phase growing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56036385A JPS57167631A (en) | 1981-03-13 | 1981-03-13 | Plasma vapor-phase growing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57167631A JPS57167631A (en) | 1982-10-15 |
JPS6347141B2 true JPS6347141B2 (fr) | 1988-09-20 |
Family
ID=12468374
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56036385A Granted JPS57167631A (en) | 1981-03-13 | 1981-03-13 | Plasma vapor-phase growing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57167631A (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02208060A (ja) * | 1989-02-07 | 1990-08-17 | Kubota Ltd | カラープリンタ |
JPH02208059A (ja) * | 1989-02-07 | 1990-08-17 | Kubota Ltd | カラープリンタ |
WO1997031391A1 (fr) * | 1996-02-23 | 1997-08-28 | Ebara Corporation | Dispositif et procede de depot chimique en phase vapeur |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59148326A (ja) * | 1983-02-14 | 1984-08-25 | Sumitomo Electric Ind Ltd | Cvd薄膜製造方法 |
AU549376B2 (en) * | 1983-02-25 | 1986-01-23 | Toyota Jidosha Kabushiki Kaisha | Plasma treatment |
JPS59225517A (ja) * | 1983-06-06 | 1984-12-18 | Nippon Denso Co Ltd | 非晶室半導体の製造方法 |
US6113701A (en) * | 1985-02-14 | 2000-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method, and system |
FR2584098A1 (fr) * | 1985-06-27 | 1987-01-02 | Air Liquide | Procede de depot d'un revetement de silicium sur une piece metallique |
JP2564482B2 (ja) * | 1985-07-23 | 1996-12-18 | キヤノン株式会社 | 堆積膜形成装置 |
US5433788A (en) * | 1987-01-19 | 1995-07-18 | Hitachi, Ltd. | Apparatus for plasma treatment using electron cyclotron resonance |
JPH0674503B2 (ja) * | 1987-05-30 | 1994-09-21 | キヤノン株式会社 | 光導電部材 |
US4820378A (en) * | 1987-07-17 | 1989-04-11 | Texas Instruments Incorporated | Process for etching silicon nitride selectively to silicon oxide |
US4886570A (en) * | 1987-07-16 | 1989-12-12 | Texas Instruments Incorporated | Processing apparatus and method |
US4838984A (en) * | 1987-07-16 | 1989-06-13 | Texas Instruments Incorporated | Method for etching films of mercury-cadmium-telluride and zinc sulfid |
US4820377A (en) * | 1987-07-16 | 1989-04-11 | Texas Instruments Incorporated | Method for cleanup processing chamber and vacuum process module |
US4844773A (en) * | 1987-07-16 | 1989-07-04 | Texas Instruments Incorporated | Process for etching silicon nitride film |
US4838990A (en) * | 1987-07-16 | 1989-06-13 | Texas Instruments Incorporated | Method for plasma etching tungsten |
DE3874638T2 (de) * | 1987-07-16 | 1993-03-18 | Texas Instruments Inc | Behandlungsapparat und -verfahren. |
JP2737909B2 (ja) * | 1988-03-08 | 1998-04-08 | ソニー株式会社 | 気相成長方法 |
DE3926023A1 (de) * | 1988-09-06 | 1990-03-15 | Schott Glaswerke | Cvd-beschichtungsverfahren zur herstellung von schichten und vorrichtung zur durchfuehrung des verfahrens |
US5129359A (en) * | 1988-11-15 | 1992-07-14 | Canon Kabushiki Kaisha | Microwave plasma CVD apparatus for the formation of functional deposited film with discharge space provided with gas feed device capable of applying bias voltage between the gas feed device and substrate |
-
1981
- 1981-03-13 JP JP56036385A patent/JPS57167631A/ja active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02208060A (ja) * | 1989-02-07 | 1990-08-17 | Kubota Ltd | カラープリンタ |
JPH02208059A (ja) * | 1989-02-07 | 1990-08-17 | Kubota Ltd | カラープリンタ |
WO1997031391A1 (fr) * | 1996-02-23 | 1997-08-28 | Ebara Corporation | Dispositif et procede de depot chimique en phase vapeur |
Also Published As
Publication number | Publication date |
---|---|
JPS57167631A (en) | 1982-10-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6347141B2 (fr) | ||
US5591494A (en) | Deposition of silicon nitrides by plasma-enhanced chemical vapor deposition | |
KR20210094462A (ko) | 전처리를 사용하여 실리콘 질화물 층을 증착하는 방법, 상기 방법을 사용하여 형성된 구조체, 및 상기 방법을 수행하기 위한 시스템 | |
KR20200143254A (ko) | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 | |
EP0074212B1 (fr) | Dispositif pour la formation d'un film mince | |
US20050087140A1 (en) | Remote plasma apparatus for processing substrate with two types of gases | |
EP1918967B1 (fr) | Procédé de formation d'une couche par déposition à partir d'un plasma | |
IE50240B1 (en) | A method of vapour phase growth and apparatus therefor | |
KR20030091733A (ko) | 반도체 기질을 부동태화하는 방법 | |
US4545328A (en) | Plasma vapor deposition film forming apparatus | |
EP1376672A1 (fr) | Procede et dispositif de depot, couche isolante et circuit integre a semi-conducteur | |
US4539934A (en) | Plasma vapor deposition film forming apparatus | |
US7763551B2 (en) | RLSA CVD deposition control using halogen gas for hydrogen scavenging | |
JPS6164124A (ja) | 薄膜作成装置 | |
CN116779528A (zh) | 沉积间隙填充流体的方法及相关系统和装置 | |
JP7033999B2 (ja) | ボロン系膜の成膜方法および成膜装置 | |
KR102157433B1 (ko) | 보론계 막의 성막 방법 및 성막 장치 | |
RU2006538C1 (ru) | Способ выращивания алмазов | |
GB2194556A (en) | Plasma enhanced chemical vapour deposition of films | |
JPH02205681A (ja) | 化学気相成長装置 | |
JPH02248038A (ja) | 多結晶質半導体物質層の製造方法 | |
Alexandrov et al. | A study of remote plasma enhanced CVD of silicon nitride films | |
JPH0380192A (ja) | マイクロ波プラズマcvd法によるダイヤモンド膜合成装置 | |
JPS60128612A (ja) | プラズマcvd装置 | |
JPS62218575A (ja) | マイクロ波プラズマcvd法 |