JPS634664A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS634664A
JPS634664A JP61148605A JP14860586A JPS634664A JP S634664 A JPS634664 A JP S634664A JP 61148605 A JP61148605 A JP 61148605A JP 14860586 A JP14860586 A JP 14860586A JP S634664 A JPS634664 A JP S634664A
Authority
JP
Japan
Prior art keywords
groove
polycrystalline silicon
film
insulating film
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61148605A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0530307B2 (enrdf_load_stackoverflow
Inventor
Nobusato Gotou
後藤　信里
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP61148605A priority Critical patent/JPS634664A/ja
Publication of JPS634664A publication Critical patent/JPS634664A/ja
Publication of JPH0530307B2 publication Critical patent/JPH0530307B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP61148605A 1986-06-25 1986-06-25 半導体装置の製造方法 Granted JPS634664A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61148605A JPS634664A (ja) 1986-06-25 1986-06-25 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61148605A JPS634664A (ja) 1986-06-25 1986-06-25 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS634664A true JPS634664A (ja) 1988-01-09
JPH0530307B2 JPH0530307B2 (enrdf_load_stackoverflow) 1993-05-07

Family

ID=15456508

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61148605A Granted JPS634664A (ja) 1986-06-25 1986-06-25 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS634664A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS648642A (en) * 1987-06-30 1989-01-12 Mitsubishi Electric Corp Semiconductor device and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS648642A (en) * 1987-06-30 1989-01-12 Mitsubishi Electric Corp Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPH0530307B2 (enrdf_load_stackoverflow) 1993-05-07

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