JPS6343893B2 - - Google Patents

Info

Publication number
JPS6343893B2
JPS6343893B2 JP57119310A JP11931082A JPS6343893B2 JP S6343893 B2 JPS6343893 B2 JP S6343893B2 JP 57119310 A JP57119310 A JP 57119310A JP 11931082 A JP11931082 A JP 11931082A JP S6343893 B2 JPS6343893 B2 JP S6343893B2
Authority
JP
Japan
Prior art keywords
layer
conductivity type
region
scribe line
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57119310A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5910232A (ja
Inventor
Nobuaki Yamamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP11931082A priority Critical patent/JPS5910232A/ja
Publication of JPS5910232A publication Critical patent/JPS5910232A/ja
Publication of JPS6343893B2 publication Critical patent/JPS6343893B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
JP11931082A 1982-07-09 1982-07-09 半導体装置の製造方法 Granted JPS5910232A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11931082A JPS5910232A (ja) 1982-07-09 1982-07-09 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11931082A JPS5910232A (ja) 1982-07-09 1982-07-09 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5910232A JPS5910232A (ja) 1984-01-19
JPS6343893B2 true JPS6343893B2 (enExample) 1988-09-01

Family

ID=14758263

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11931082A Granted JPS5910232A (ja) 1982-07-09 1982-07-09 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5910232A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0286892U (enExample) * 1988-12-26 1990-07-10

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49114367A (enExample) * 1973-02-28 1974-10-31

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0286892U (enExample) * 1988-12-26 1990-07-10

Also Published As

Publication number Publication date
JPS5910232A (ja) 1984-01-19

Similar Documents

Publication Publication Date Title
US4378627A (en) Self-aligned metal process for field effect transistor integrated circuits using polycrystalline silicon gate electrodes
JPH0570303B2 (enExample)
JPH1070281A (ja) 半導体装置およびその製造方法
JPS6153867B2 (enExample)
KR930006736B1 (ko) 반도체장치의 제조방법
JPS60124967A (ja) 集積回路構造体
JPS6343893B2 (enExample)
JPS6252950B2 (enExample)
JPH0510827B2 (enExample)
CN116207139A (zh) 异质结双极晶体管和异质结双极晶体管的形成方法
JPS5846846B2 (ja) ハンドウタイソウチノセイゾウホウホウ
JPS5961181A (ja) 半導体装置の製造方法
KR0171069B1 (ko) 반도체 장치의 접촉부 형성방법
JPS581542B2 (ja) 半導体集積回路の製造方法
JPS59149030A (ja) 半導体装置の製造法
JPH11135624A (ja) 半導体装置の製造方法
JPS6120141B2 (enExample)
JPH0155585B2 (enExample)
JP3161044B2 (ja) ヘテロ接合バイポーラトランジスタ集積回路装置の製造方法
JPS63114261A (ja) トランジスタ用の自己整合型ベース分路
JPH0251252B2 (enExample)
JPS60158665A (ja) 半導体装置の製造方法
JPH0122983B2 (enExample)
JPH11214325A (ja) 半導体装置の製造方法
JPH02210867A (ja) 半導体装置の製造方法