JPS6343887B2 - - Google Patents

Info

Publication number
JPS6343887B2
JPS6343887B2 JP1914283A JP1914283A JPS6343887B2 JP S6343887 B2 JPS6343887 B2 JP S6343887B2 JP 1914283 A JP1914283 A JP 1914283A JP 1914283 A JP1914283 A JP 1914283A JP S6343887 B2 JPS6343887 B2 JP S6343887B2
Authority
JP
Japan
Prior art keywords
silicon
single crystal
crystal silicon
porous
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1914283A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59144149A (ja
Inventor
Takanobu Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EASTERN STEEL
Original Assignee
EASTERN STEEL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EASTERN STEEL filed Critical EASTERN STEEL
Priority to JP1914283A priority Critical patent/JPS59144149A/ja
Publication of JPS59144149A publication Critical patent/JPS59144149A/ja
Publication of JPS6343887B2 publication Critical patent/JPS6343887B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/7627—Vertical isolation by full isolation by porous oxide silicon, i.e. FIPOS techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76281—Lateral isolation by selective oxidation of silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
JP1914283A 1983-02-08 1983-02-08 誘電体分離基板の製造方法 Granted JPS59144149A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1914283A JPS59144149A (ja) 1983-02-08 1983-02-08 誘電体分離基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1914283A JPS59144149A (ja) 1983-02-08 1983-02-08 誘電体分離基板の製造方法

Publications (2)

Publication Number Publication Date
JPS59144149A JPS59144149A (ja) 1984-08-18
JPS6343887B2 true JPS6343887B2 (enrdf_load_stackoverflow) 1988-09-01

Family

ID=11991198

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1914283A Granted JPS59144149A (ja) 1983-02-08 1983-02-08 誘電体分離基板の製造方法

Country Status (1)

Country Link
JP (1) JPS59144149A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60189238A (ja) * 1984-03-09 1985-09-26 Oki Electric Ind Co Ltd 半導体装置の製造方法
EP0225519A3 (en) * 1985-12-06 1989-12-06 Texas Instruments Incorporated High definition anodized sublayer boundary
US4910165A (en) * 1988-11-04 1990-03-20 Ncr Corporation Method for forming epitaxial silicon on insulator structures using oxidized porous silicon
JP3176072B2 (ja) * 1991-01-16 2001-06-11 キヤノン株式会社 半導体基板の形成方法
EP0553856B1 (en) * 1992-01-31 2002-04-17 Canon Kabushiki Kaisha Method of preparing a semiconductor substrate
KR950005464B1 (ko) * 1992-02-25 1995-05-24 삼성전자주식회사 반도체장치의 제조방법
US5331180A (en) * 1992-04-30 1994-07-19 Fujitsu Limited Porous semiconductor light emitting device

Also Published As

Publication number Publication date
JPS59144149A (ja) 1984-08-18

Similar Documents

Publication Publication Date Title
JPH05217827A (ja) 半導体基体及びその作製方法
JP3176072B2 (ja) 半導体基板の形成方法
JPH05217821A (ja) 半導体基板の作製方法
JPH05217893A (ja) 半導体基材の作製方法
JPH05217823A (ja) 半導体基材の作製方法
JPS6343887B2 (enrdf_load_stackoverflow)
JP2989051B2 (ja) 炭化シリコンバイポーラ半導体装置およびその製造方法
JP3074156B2 (ja) 半導体素子のフィールド酸化膜形成方法
US4579625A (en) Method of producing a complementary semiconductor device with a dielectric isolation structure
JP2750163B2 (ja) 誘電体分離型半導体装置の製造方法
JPS5852843A (ja) 半導体集積回路装置の製造法
JPS61154121A (ja) 半導体装置の製造方法
JP2807717B2 (ja) 半導体基板の製造方法
JPS5939044A (ja) 絶縁分離集積回路用基板の製造方法
JPH07183372A (ja) 半導体基板の作成方法
JP3112101B2 (ja) 半導体基材の作製方法
JPS6244412B2 (enrdf_load_stackoverflow)
JPS6136380B2 (enrdf_load_stackoverflow)
JPS6244417B2 (enrdf_load_stackoverflow)
JPS62104050A (ja) 半導体装置の製造方法
JPS61292935A (ja) 半導体装置の製造方法
JPH0312773B2 (enrdf_load_stackoverflow)
JPS6244411B2 (enrdf_load_stackoverflow)
JPS62296436A (ja) 半導体装置の製造方法
JPS6171647A (ja) 半導体装置の製造方法