JPS6343886B2 - - Google Patents

Info

Publication number
JPS6343886B2
JPS6343886B2 JP57023203A JP2320382A JPS6343886B2 JP S6343886 B2 JPS6343886 B2 JP S6343886B2 JP 57023203 A JP57023203 A JP 57023203A JP 2320382 A JP2320382 A JP 2320382A JP S6343886 B2 JPS6343886 B2 JP S6343886B2
Authority
JP
Japan
Prior art keywords
phosphorus
polycrystalline silicon
glass film
silicon layer
phosphorus glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57023203A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58140130A (ja
Inventor
Yoshiaki Yadoiwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57023203A priority Critical patent/JPS58140130A/ja
Publication of JPS58140130A publication Critical patent/JPS58140130A/ja
Publication of JPS6343886B2 publication Critical patent/JPS6343886B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/60—

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP57023203A 1982-02-16 1982-02-16 半導体装置の製造方法 Granted JPS58140130A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57023203A JPS58140130A (ja) 1982-02-16 1982-02-16 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57023203A JPS58140130A (ja) 1982-02-16 1982-02-16 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58140130A JPS58140130A (ja) 1983-08-19
JPS6343886B2 true JPS6343886B2 (en:Method) 1988-09-01

Family

ID=12104105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57023203A Granted JPS58140130A (ja) 1982-02-16 1982-02-16 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58140130A (en:Method)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0669039B2 (ja) * 1985-04-12 1994-08-31 株式会社リコー 半導体装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5133575A (en) * 1974-09-17 1976-03-22 Nippon Telegraph & Telephone Tasohaisenkozo
JPS53105385A (en) * 1977-02-25 1978-09-13 Fujitsu Ltd Manufacture for semiconductor

Also Published As

Publication number Publication date
JPS58140130A (ja) 1983-08-19

Similar Documents

Publication Publication Date Title
US4305974A (en) Method of manufacturing a semiconductor device
US4191603A (en) Making semiconductor structure with improved phosphosilicate glass isolation
JPS6343886B2 (en:Method)
JPS62213141A (ja) 半導体装置の製造方法
JPS58115834A (ja) 半導体装置の製造方法
JPH0629554A (ja) 半導体装置の製造方法
JPS63257244A (ja) 半導体装置およびその製造方法
JPH035656B2 (en:Method)
JPS6320383B2 (en:Method)
JPH0427703B2 (en:Method)
KR100260524B1 (ko) 반도체소자의금속배선형성방법
JPS6120154B2 (en:Method)
JPS6214941B2 (en:Method)
JPS61198635A (ja) 半導体装置の製造方法
JPH05226479A (ja) 半導体装置の製造方法
JPH0320086A (ja) 半導体記憶装置の製造方法
JPS5889869A (ja) 半導体装置の製造方法
JPS60134445A (ja) 半導体装置の製造方法
JPS6333305B2 (en:Method)
JPS60115265A (ja) 半導体装置及びその製造方法
JPS61131482A (ja) 不揮発性半導体記憶装置の製造方法
JPS58125834A (ja) 半導体装置の製造方法
JPS58212166A (ja) 半導体装置の製造方法
JPS61121439A (ja) 半導体装置の製造方法
JPS62194658A (ja) 半導体装置の製造方法