JPS6342872B2 - - Google Patents

Info

Publication number
JPS6342872B2
JPS6342872B2 JP56069872A JP6987281A JPS6342872B2 JP S6342872 B2 JPS6342872 B2 JP S6342872B2 JP 56069872 A JP56069872 A JP 56069872A JP 6987281 A JP6987281 A JP 6987281A JP S6342872 B2 JPS6342872 B2 JP S6342872B2
Authority
JP
Japan
Prior art keywords
groove
substrate
inp
ingaasp
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56069872A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57184277A (en
Inventor
Hiroshi Ishikawa
Hajime Imai
Nobuyuki Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6987281A priority Critical patent/JPS57184277A/ja
Publication of JPS57184277A publication Critical patent/JPS57184277A/ja
Publication of JPS6342872B2 publication Critical patent/JPS6342872B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Weting (AREA)
JP6987281A 1981-05-08 1981-05-08 Manufacture of semiconductor light emission device Granted JPS57184277A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6987281A JPS57184277A (en) 1981-05-08 1981-05-08 Manufacture of semiconductor light emission device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6987281A JPS57184277A (en) 1981-05-08 1981-05-08 Manufacture of semiconductor light emission device

Publications (2)

Publication Number Publication Date
JPS57184277A JPS57184277A (en) 1982-11-12
JPS6342872B2 true JPS6342872B2 (enrdf_load_stackoverflow) 1988-08-25

Family

ID=13415307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6987281A Granted JPS57184277A (en) 1981-05-08 1981-05-08 Manufacture of semiconductor light emission device

Country Status (1)

Country Link
JP (1) JPS57184277A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6608352B2 (ja) * 2016-12-20 2019-11-20 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子およびその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55121693A (en) * 1979-03-15 1980-09-18 Tokyo Inst Of Technol Manufacture of band-like semiconductor laser by selective melt-back process

Also Published As

Publication number Publication date
JPS57184277A (en) 1982-11-12

Similar Documents

Publication Publication Date Title
GB2114808A (en) Semiconductor laser manufacture
JPS6237904B2 (enrdf_load_stackoverflow)
US4980314A (en) Vapor processing of a substrate
JP4514868B2 (ja) 半導体装置の製造方法
US6642075B2 (en) Method for manufacturing semiconductor laser device
JP4128790B2 (ja) リッジ導波路型分布帰還レーザの製造方法
US4977568A (en) Semiconductor laser device
EP0187718B1 (en) A distributed feedback semiconductor laser device
JPS6342872B2 (enrdf_load_stackoverflow)
JPS6237911B2 (enrdf_load_stackoverflow)
GB2221093A (en) A semiconductor laser device and production method thereof
JPH02260636A (ja) 半導体レーザの製造方法
JP2804197B2 (ja) 半導体レーザの製造方法
US5956360A (en) Uncooled lasers with reduced low bias capacitance effect
JPH0824208B2 (ja) 半導体レ−ザの製造法
JP3215908B2 (ja) 半導体装置の作製方法
JPH06283816A (ja) 埋め込み構造半導体レーザとその製造方法
JPS6334293Y2 (enrdf_load_stackoverflow)
JP2003110195A (ja) 半導体光素子及びその製造方法
KR960027098A (ko) 반도체 레이저 다이오드 및 그 제조방법
JPH07162078A (ja) 半導体レーザ素子及びその製造方法
JPH0362582A (ja) 半導体装置の製造方法
JP2008177623A (ja) リッジ導波路型分布帰還レーザ
JPS6281782A (ja) 半導体発光装置
JPS62232129A (ja) 特定格子定数の表面格子の製造方法