JPS57184277A - Manufacture of semiconductor light emission device - Google Patents

Manufacture of semiconductor light emission device

Info

Publication number
JPS57184277A
JPS57184277A JP6987281A JP6987281A JPS57184277A JP S57184277 A JPS57184277 A JP S57184277A JP 6987281 A JP6987281 A JP 6987281A JP 6987281 A JP6987281 A JP 6987281A JP S57184277 A JPS57184277 A JP S57184277A
Authority
JP
Japan
Prior art keywords
manufacture
etching
groove
light emission
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6987281A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6342872B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Ishikawa
Hajime Imai
Nobuyuki Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6987281A priority Critical patent/JPS57184277A/ja
Publication of JPS57184277A publication Critical patent/JPS57184277A/ja
Publication of JPS6342872B2 publication Critical patent/JPS6342872B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Weting (AREA)
JP6987281A 1981-05-08 1981-05-08 Manufacture of semiconductor light emission device Granted JPS57184277A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6987281A JPS57184277A (en) 1981-05-08 1981-05-08 Manufacture of semiconductor light emission device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6987281A JPS57184277A (en) 1981-05-08 1981-05-08 Manufacture of semiconductor light emission device

Publications (2)

Publication Number Publication Date
JPS57184277A true JPS57184277A (en) 1982-11-12
JPS6342872B2 JPS6342872B2 (enrdf_load_stackoverflow) 1988-08-25

Family

ID=13415307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6987281A Granted JPS57184277A (en) 1981-05-08 1981-05-08 Manufacture of semiconductor light emission device

Country Status (1)

Country Link
JP (1) JPS57184277A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018101675A (ja) * 2016-12-20 2018-06-28 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子およびその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55121693A (en) * 1979-03-15 1980-09-18 Tokyo Inst Of Technol Manufacture of band-like semiconductor laser by selective melt-back process

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55121693A (en) * 1979-03-15 1980-09-18 Tokyo Inst Of Technol Manufacture of band-like semiconductor laser by selective melt-back process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018101675A (ja) * 2016-12-20 2018-06-28 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子およびその製造方法

Also Published As

Publication number Publication date
JPS6342872B2 (enrdf_load_stackoverflow) 1988-08-25

Similar Documents

Publication Publication Date Title
US4136928A (en) Optical integrated circuit including junction laser with oblique mirror
Soda et al. GaInAsP/InP surface emitting injection lasers with short cavity length
JPS57170584A (en) Semiconductor laser device
JPS5963781A (ja) 発光構体
JPS5681994A (en) Field effect type semiconductor laser and manufacture thereof
DE3751782D1 (de) Halbleiterstrukturen und deren Herstellungsverfahren
EP0187718B1 (en) A distributed feedback semiconductor laser device
Kishino et al. Fabrication and lasing properties of mesa substrate buried heterostructure GaInAsP/InP lasers at 1.3 µm wavelength
JPS57184277A (en) Manufacture of semiconductor light emission device
JPS5673487A (en) Semiconductor laser and its manufacture
EP0192451A2 (en) A semiconductor laser device
JPS55121693A (en) Manufacture of band-like semiconductor laser by selective melt-back process
JPH02228087A (ja) 半導体レーザ素子
JPS57162382A (en) Semiconductor laser
JPS5451491A (en) Semiconductor laser
JPS6449292A (en) Semiconductor light-emitting device
JPS5596694A (en) Semiconductor laser device and method of fabricating the same
JPS54138386A (en) Semiconductor laser device of current narrow type
JPS5696888A (en) Semiconductor light emitting device
JPS5580388A (en) Semiconductor light emitting device
JPS57192094A (en) Semiconductor laser device
JPS6412592A (en) Semiconductor laser device
Koren et al. Three-channel buried-crescent InGaAsP laser with 1.51 μm wavelength on semi-insulating InP
JPS641074B2 (enrdf_load_stackoverflow)
JPS5580386A (en) Manufacture of semiconductor light emitting device