JPS6341240B2 - - Google Patents

Info

Publication number
JPS6341240B2
JPS6341240B2 JP56152912A JP15291281A JPS6341240B2 JP S6341240 B2 JPS6341240 B2 JP S6341240B2 JP 56152912 A JP56152912 A JP 56152912A JP 15291281 A JP15291281 A JP 15291281A JP S6341240 B2 JPS6341240 B2 JP S6341240B2
Authority
JP
Japan
Prior art keywords
insulating layer
floating gate
gate
layer
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56152912A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5854668A (ja
Inventor
Toshikazu Furuya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56152912A priority Critical patent/JPS5854668A/ja
Publication of JPS5854668A publication Critical patent/JPS5854668A/ja
Publication of JPS6341240B2 publication Critical patent/JPS6341240B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP56152912A 1981-09-29 1981-09-29 電気的消去型読出し専用メモリおよびその製造方法 Granted JPS5854668A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56152912A JPS5854668A (ja) 1981-09-29 1981-09-29 電気的消去型読出し専用メモリおよびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56152912A JPS5854668A (ja) 1981-09-29 1981-09-29 電気的消去型読出し専用メモリおよびその製造方法

Publications (2)

Publication Number Publication Date
JPS5854668A JPS5854668A (ja) 1983-03-31
JPS6341240B2 true JPS6341240B2 (enExample) 1988-08-16

Family

ID=15550853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56152912A Granted JPS5854668A (ja) 1981-09-29 1981-09-29 電気的消去型読出し専用メモリおよびその製造方法

Country Status (1)

Country Link
JP (1) JPS5854668A (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6094775A (ja) * 1983-10-27 1985-05-27 Mitsubishi Electric Corp 半導体記憶装置及びその製造方法
US4754320A (en) * 1985-02-25 1988-06-28 Kabushiki Kaisha Toshiba EEPROM with sidewall control gate
US4667217A (en) * 1985-04-19 1987-05-19 Ncr Corporation Two bit vertically/horizontally integrated memory cell
US4794565A (en) * 1986-09-15 1988-12-27 The Regents Of The University Of California Electrically programmable memory device employing source side injection
KR970003903B1 (en) * 1987-04-24 1997-03-22 Hitachi Mfg Kk Semiconductor device and fabricating method thereof
US5153144A (en) * 1988-05-10 1992-10-06 Hitachi, Ltd. Method of making tunnel EEPROM
US5445980A (en) 1988-05-10 1995-08-29 Hitachi, Ltd. Method of making a semiconductor memory device
US5168465A (en) * 1988-06-08 1992-12-01 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
US5095344A (en) * 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5268319A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
US5198380A (en) * 1988-06-08 1993-03-30 Sundisk Corporation Method of highly compact EPROM and flash EEPROM devices
US5089433A (en) * 1988-08-08 1992-02-18 National Semiconductor Corporation Bipolar field-effect electrically erasable programmable read only memory cell and method of manufacture
US5051793A (en) * 1989-03-27 1991-09-24 Ict International Cmos Technology, Inc. Coplanar flash EPROM cell and method of making same
JP2597719B2 (ja) * 1989-07-31 1997-04-09 株式会社東芝 不揮発性半導体記憶装置およびその動作方法
KR940006094B1 (ko) * 1989-08-17 1994-07-06 삼성전자 주식회사 불휘발성 반도체 기억장치 및 그 제조방법
US5063172A (en) * 1990-06-28 1991-11-05 National Semiconductor Corporation Manufacture of a split-gate EPROM cell using polysilicon spacers
US5343063A (en) * 1990-12-18 1994-08-30 Sundisk Corporation Dense vertical programmable read only memory cell structure and processes for making them
US5512505A (en) * 1990-12-18 1996-04-30 Sandisk Corporation Method of making dense vertical programmable read only memory cell structure
WO1994015363A1 (en) * 1992-12-28 1994-07-07 Yu Shih Chiang Non-volatile semiconductor memory cell
US5723888A (en) * 1993-05-17 1998-03-03 Yu; Shih-Chiang Non-volatile semiconductor memory device
FR2749977B1 (fr) * 1996-06-14 1998-10-09 Commissariat Energie Atomique Transistor mos a puits quantique et procedes de fabrication de celui-ci

Also Published As

Publication number Publication date
JPS5854668A (ja) 1983-03-31

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