JPS6339114B2 - - Google Patents
Info
- Publication number
- JPS6339114B2 JPS6339114B2 JP57184556A JP18455682A JPS6339114B2 JP S6339114 B2 JPS6339114 B2 JP S6339114B2 JP 57184556 A JP57184556 A JP 57184556A JP 18455682 A JP18455682 A JP 18455682A JP S6339114 B2 JPS6339114 B2 JP S6339114B2
- Authority
- JP
- Japan
- Prior art keywords
- mixed crystal
- layer
- substrate
- semiconductor laser
- stress
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 20
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 13
- 238000000034 method Methods 0.000 description 9
- 239000007791 liquid phase Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910005542 GaSb Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ZSBXGIUJOOQZMP-JLNYLFASSA-N Matrine Chemical compound C1CC[C@H]2CN3C(=O)CCC[C@@H]3[C@@H]3[C@H]2N1CCC3 ZSBXGIUJOOQZMP-JLNYLFASSA-N 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18455682A JPS5878490A (ja) | 1982-10-22 | 1982-10-22 | 半導体レ−ザ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18455682A JPS5878490A (ja) | 1982-10-22 | 1982-10-22 | 半導体レ−ザ装置 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23111785A Division JPS61142786A (ja) | 1985-10-18 | 1985-10-18 | 半導体レ−ザ装置 |
| JP11734986A Division JPS61258491A (ja) | 1986-05-23 | 1986-05-23 | 半導体レーザ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5878490A JPS5878490A (ja) | 1983-05-12 |
| JPS6339114B2 true JPS6339114B2 (xx) | 1988-08-03 |
Family
ID=16155268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18455682A Granted JPS5878490A (ja) | 1982-10-22 | 1982-10-22 | 半導体レ−ザ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5878490A (xx) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02118717U (xx) * | 1989-03-09 | 1990-09-25 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62245689A (ja) * | 1986-04-18 | 1987-10-26 | Toshiba Corp | 半導体発光装置 |
| JPS61258491A (ja) * | 1986-05-23 | 1986-11-15 | Hitachi Ltd | 半導体レーザ装置 |
| US5212705A (en) * | 1992-02-18 | 1993-05-18 | Eastman Kodak Company | AlAS Zn-stop diffusion layer in AlGaAs laser diodes |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49113591A (xx) * | 1973-02-26 | 1974-10-30 | ||
| JPS5212719A (en) * | 1975-07-19 | 1977-01-31 | Nat Jutaku Kenzai | Quenching panel |
| JPS52127190A (en) * | 1976-04-19 | 1977-10-25 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
-
1982
- 1982-10-22 JP JP18455682A patent/JPS5878490A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49113591A (xx) * | 1973-02-26 | 1974-10-30 | ||
| JPS5212719A (en) * | 1975-07-19 | 1977-01-31 | Nat Jutaku Kenzai | Quenching panel |
| JPS52127190A (en) * | 1976-04-19 | 1977-10-25 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02118717U (xx) * | 1989-03-09 | 1990-09-25 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5878490A (ja) | 1983-05-12 |
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