JPS6339114B2 - - Google Patents

Info

Publication number
JPS6339114B2
JPS6339114B2 JP57184556A JP18455682A JPS6339114B2 JP S6339114 B2 JPS6339114 B2 JP S6339114B2 JP 57184556 A JP57184556 A JP 57184556A JP 18455682 A JP18455682 A JP 18455682A JP S6339114 B2 JPS6339114 B2 JP S6339114B2
Authority
JP
Japan
Prior art keywords
mixed crystal
layer
substrate
semiconductor laser
stress
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57184556A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5878490A (ja
Inventor
Takashi Kajimura
Takaro Kuroda
Shigeo Yamashita
Michiharu Nakamura
Junichi Umeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP18455682A priority Critical patent/JPS5878490A/ja
Publication of JPS5878490A publication Critical patent/JPS5878490A/ja
Publication of JPS6339114B2 publication Critical patent/JPS6339114B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP18455682A 1982-10-22 1982-10-22 半導体レ−ザ装置 Granted JPS5878490A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18455682A JPS5878490A (ja) 1982-10-22 1982-10-22 半導体レ−ザ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18455682A JPS5878490A (ja) 1982-10-22 1982-10-22 半導体レ−ザ装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP23111785A Division JPS61142786A (ja) 1985-10-18 1985-10-18 半導体レ−ザ装置
JP11734986A Division JPS61258491A (ja) 1986-05-23 1986-05-23 半導体レーザ装置

Publications (2)

Publication Number Publication Date
JPS5878490A JPS5878490A (ja) 1983-05-12
JPS6339114B2 true JPS6339114B2 (enrdf_load_stackoverflow) 1988-08-03

Family

ID=16155268

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18455682A Granted JPS5878490A (ja) 1982-10-22 1982-10-22 半導体レ−ザ装置

Country Status (1)

Country Link
JP (1) JPS5878490A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02118717U (enrdf_load_stackoverflow) * 1989-03-09 1990-09-25

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62245689A (ja) * 1986-04-18 1987-10-26 Toshiba Corp 半導体発光装置
JPS61258491A (ja) * 1986-05-23 1986-11-15 Hitachi Ltd 半導体レーザ装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS542829B2 (enrdf_load_stackoverflow) * 1973-02-26 1979-02-14
JPS5212719A (en) * 1975-07-19 1977-01-31 Nat Jutaku Kenzai Quenching panel
JPS52127190A (en) * 1976-04-19 1977-10-25 Matsushita Electric Ind Co Ltd Semiconductor laser device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02118717U (enrdf_load_stackoverflow) * 1989-03-09 1990-09-25

Also Published As

Publication number Publication date
JPS5878490A (ja) 1983-05-12

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