JPS6338874B2 - - Google Patents

Info

Publication number
JPS6338874B2
JPS6338874B2 JP57061765A JP6176582A JPS6338874B2 JP S6338874 B2 JPS6338874 B2 JP S6338874B2 JP 57061765 A JP57061765 A JP 57061765A JP 6176582 A JP6176582 A JP 6176582A JP S6338874 B2 JPS6338874 B2 JP S6338874B2
Authority
JP
Japan
Prior art keywords
substrate
layer
semiconductor device
insulating material
stainless steel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57061765A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58180069A (ja
Inventor
Sunao Matsubara
Juichi Shimada
Atsushi Saiki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57061765A priority Critical patent/JPS58180069A/ja
Publication of JPS58180069A publication Critical patent/JPS58180069A/ja
Publication of JPS6338874B2 publication Critical patent/JPS6338874B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
JP57061765A 1982-04-15 1982-04-15 半導体装置 Granted JPS58180069A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57061765A JPS58180069A (ja) 1982-04-15 1982-04-15 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57061765A JPS58180069A (ja) 1982-04-15 1982-04-15 半導体装置

Publications (2)

Publication Number Publication Date
JPS58180069A JPS58180069A (ja) 1983-10-21
JPS6338874B2 true JPS6338874B2 (fr) 1988-08-02

Family

ID=13180541

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57061765A Granted JPS58180069A (ja) 1982-04-15 1982-04-15 半導体装置

Country Status (1)

Country Link
JP (1) JPS58180069A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010287715A (ja) * 2009-06-11 2010-12-24 Mitsubishi Electric Corp 薄膜太陽電池およびその製造方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IN162671B (fr) * 1984-03-05 1988-06-25 Energy Conversion Devices Inc
JPS6115763U (ja) * 1984-07-02 1986-01-29 太陽誘電株式会社 マイカ成形基板を使用した薄膜素子
JP2784841B2 (ja) * 1990-08-09 1998-08-06 キヤノン株式会社 太陽電池用基板
JP2908067B2 (ja) * 1991-05-09 1999-06-21 キヤノン株式会社 太陽電池用基板および太陽電池
FR2690279B1 (fr) * 1992-04-15 1997-10-03 Picogiga Sa Composant photovoltauique multispectral.
US7354462B2 (en) 2002-10-04 2008-04-08 Chevron U.S.A. Inc. Systems and methods of improving diesel fuel performance in cold climates
KR101608953B1 (ko) 2007-11-09 2016-04-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 장치 및 그 제조 방법
US20090139558A1 (en) * 2007-11-29 2009-06-04 Shunpei Yamazaki Photoelectric conversion device and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010287715A (ja) * 2009-06-11 2010-12-24 Mitsubishi Electric Corp 薄膜太陽電池およびその製造方法

Also Published As

Publication number Publication date
JPS58180069A (ja) 1983-10-21

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