JPS6335452A - 半導体拡散炉用構成部材の製造方法 - Google Patents
半導体拡散炉用構成部材の製造方法Info
- Publication number
- JPS6335452A JPS6335452A JP61178800A JP17880086A JPS6335452A JP S6335452 A JPS6335452 A JP S6335452A JP 61178800 A JP61178800 A JP 61178800A JP 17880086 A JP17880086 A JP 17880086A JP S6335452 A JPS6335452 A JP S6335452A
- Authority
- JP
- Japan
- Prior art keywords
- component
- diffusion furnace
- coating layer
- semiconductor diffusion
- sic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009792 diffusion process Methods 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000000843 powder Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 22
- 239000011247 coating layer Substances 0.000 claims description 18
- 239000002245 particle Substances 0.000 claims description 17
- 239000012535 impurity Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 238000000746 purification Methods 0.000 claims description 6
- 238000010926 purge Methods 0.000 claims description 4
- 239000011230 binding agent Substances 0.000 claims description 3
- 239000008187 granular material Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000005245 sintering Methods 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 24
- 229910010271 silicon carbide Inorganic materials 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 239000011362 coarse particle Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000007569 slipcasting Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010440 gypsum Substances 0.000 description 1
- 229910052602 gypsum Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910000039 hydrogen halide Inorganic materials 0.000 description 1
- 239000012433 hydrogen halide Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011271 tar pitch Substances 0.000 description 1
- DWAWYEUJUWLESO-UHFFFAOYSA-N trichloromethylsilane Chemical compound [SiH3]C(Cl)(Cl)Cl DWAWYEUJUWLESO-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61178800A JPS6335452A (ja) | 1986-07-31 | 1986-07-31 | 半導体拡散炉用構成部材の製造方法 |
| IT19769/87A IT1203839B (it) | 1986-07-31 | 1987-03-19 | Procedimento per realizzare un componente di forno |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61178800A JPS6335452A (ja) | 1986-07-31 | 1986-07-31 | 半導体拡散炉用構成部材の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6335452A true JPS6335452A (ja) | 1988-02-16 |
| JPH0310592B2 JPH0310592B2 (enrdf_load_stackoverflow) | 1991-02-14 |
Family
ID=16054866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61178800A Granted JPS6335452A (ja) | 1986-07-31 | 1986-07-31 | 半導体拡散炉用構成部材の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS6335452A (enrdf_load_stackoverflow) |
| IT (1) | IT1203839B (enrdf_load_stackoverflow) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01282153A (ja) * | 1988-05-06 | 1989-11-14 | Shin Etsu Chem Co Ltd | 炭化珪素質反応管 |
| JPH01282152A (ja) * | 1988-05-06 | 1989-11-14 | Shin Etsu Chem Co Ltd | 炭化珪素質反応管 |
| JPH0382117A (ja) * | 1989-08-25 | 1991-04-08 | Toshiba Ceramics Co Ltd | 半導体ウエハ処理用治具の製造方法 |
| JPH1045476A (ja) * | 1996-08-01 | 1998-02-17 | Toshiba Ceramics Co Ltd | 半導体ウエハ処理具 |
| US6506254B1 (en) | 2000-06-30 | 2003-01-14 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
| US6673198B1 (en) | 1999-12-22 | 2004-01-06 | Lam Research Corporation | Semiconductor processing equipment having improved process drift control |
| US6699401B1 (en) | 2000-02-15 | 2004-03-02 | Toshiba Ceramics Co., Ltd. | Method for manufacturing Si-SiC member for semiconductor heat treatment |
| US6890861B1 (en) | 2000-06-30 | 2005-05-10 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
| JP2024140909A (ja) * | 2023-03-28 | 2024-10-10 | 日本碍子株式会社 | セラミック体及びその製造方法 |
-
1986
- 1986-07-31 JP JP61178800A patent/JPS6335452A/ja active Granted
-
1987
- 1987-03-19 IT IT19769/87A patent/IT1203839B/it active
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01282153A (ja) * | 1988-05-06 | 1989-11-14 | Shin Etsu Chem Co Ltd | 炭化珪素質反応管 |
| JPH01282152A (ja) * | 1988-05-06 | 1989-11-14 | Shin Etsu Chem Co Ltd | 炭化珪素質反応管 |
| JPH0382117A (ja) * | 1989-08-25 | 1991-04-08 | Toshiba Ceramics Co Ltd | 半導体ウエハ処理用治具の製造方法 |
| JPH1045476A (ja) * | 1996-08-01 | 1998-02-17 | Toshiba Ceramics Co Ltd | 半導体ウエハ処理具 |
| US6673198B1 (en) | 1999-12-22 | 2004-01-06 | Lam Research Corporation | Semiconductor processing equipment having improved process drift control |
| US6881608B2 (en) | 1999-12-22 | 2005-04-19 | Lam Research Corporation | Semiconductor processing equipment having improved process drift control |
| US6699401B1 (en) | 2000-02-15 | 2004-03-02 | Toshiba Ceramics Co., Ltd. | Method for manufacturing Si-SiC member for semiconductor heat treatment |
| US6506254B1 (en) | 2000-06-30 | 2003-01-14 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
| US6890861B1 (en) | 2000-06-30 | 2005-05-10 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
| US7802539B2 (en) | 2000-06-30 | 2010-09-28 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
| JP2024140909A (ja) * | 2023-03-28 | 2024-10-10 | 日本碍子株式会社 | セラミック体及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| IT8719769A0 (it) | 1987-03-19 |
| JPH0310592B2 (enrdf_load_stackoverflow) | 1991-02-14 |
| IT1203839B (it) | 1989-02-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |