JPS6335109B2 - - Google Patents
Info
- Publication number
- JPS6335109B2 JPS6335109B2 JP56072502A JP7250281A JPS6335109B2 JP S6335109 B2 JPS6335109 B2 JP S6335109B2 JP 56072502 A JP56072502 A JP 56072502A JP 7250281 A JP7250281 A JP 7250281A JP S6335109 B2 JPS6335109 B2 JP S6335109B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- polysilicon film
- silicon
- polysilicon
- barrier diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/617—Combinations of vertical BJTs and only diodes
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56072502A JPS57187963A (en) | 1981-05-14 | 1981-05-14 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56072502A JPS57187963A (en) | 1981-05-14 | 1981-05-14 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57187963A JPS57187963A (en) | 1982-11-18 |
JPS6335109B2 true JPS6335109B2 (enrdf_load_stackoverflow) | 1988-07-13 |
Family
ID=13491171
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56072502A Granted JPS57187963A (en) | 1981-05-14 | 1981-05-14 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57187963A (enrdf_load_stackoverflow) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59111375A (ja) * | 1982-12-08 | 1984-06-27 | エヌ・ベ−・フイリップス・フル−イランペンファブリケン | 半導体デバイスおよびその製造方法 |
JPS59121872A (ja) * | 1982-12-15 | 1984-07-14 | Fujitsu Ltd | 半導体装置 |
US4512076A (en) * | 1982-12-20 | 1985-04-23 | Raytheon Company | Semiconductor device fabrication process |
JPS63257269A (ja) * | 1987-04-14 | 1988-10-25 | Fujitsu Ltd | 半導体装置のコンタクト形成方法 |
JP2793207B2 (ja) * | 1988-11-04 | 1998-09-03 | 株式会社日立製作所 | 半導体装置の製造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5177076A (en) * | 1974-12-27 | 1976-07-03 | Fujitsu Ltd | Handotaisochinoseizohoho |
-
1981
- 1981-05-14 JP JP56072502A patent/JPS57187963A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS57187963A (en) | 1982-11-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH0228902B2 (enrdf_load_stackoverflow) | ||
US4412378A (en) | Method for manufacturing semiconductor device utilizing selective masking, etching and oxidation | |
KR940009360B1 (ko) | 반도체장치 및 그 제조방법 | |
US4151631A (en) | Method of manufacturing Si gate MOS integrated circuit | |
JP2890584B2 (ja) | 半導体装置の製造方法 | |
JPH0578173B2 (enrdf_load_stackoverflow) | ||
JPH07142498A (ja) | 半導体装置およびその製造方法 | |
JPS6335109B2 (enrdf_load_stackoverflow) | ||
JPH0513426A (ja) | 半導体装置 | |
JPH0581051B2 (enrdf_load_stackoverflow) | ||
JPS6226573B2 (enrdf_load_stackoverflow) | ||
JPH0127589B2 (enrdf_load_stackoverflow) | ||
JPS6244819B2 (enrdf_load_stackoverflow) | ||
JP2623575B2 (ja) | バイポーラトランジスタの製造方法 | |
JP2855684B2 (ja) | 半導体装置の製造方法 | |
JP3077146B2 (ja) | 半導体装置の製造方法 | |
JPS59124767A (ja) | 半導体・集積回路装置の製造方法 | |
JP2720567B2 (ja) | 半導体装置の製造方法 | |
JP3848782B2 (ja) | 半導体装置の製造方法 | |
JPH07109823B2 (ja) | Mis型集積回路の製造方法 | |
JPH0777263B2 (ja) | 半導体装置の製造方法 | |
JPS63107170A (ja) | 半導体集積回路装置 | |
JPH08264651A (ja) | 半導体装置の製造方法 | |
JPS6262458B2 (enrdf_load_stackoverflow) | ||
JPS60195972A (ja) | 半導体装置の製造方法 |