JPS6335109B2 - - Google Patents

Info

Publication number
JPS6335109B2
JPS6335109B2 JP56072502A JP7250281A JPS6335109B2 JP S6335109 B2 JPS6335109 B2 JP S6335109B2 JP 56072502 A JP56072502 A JP 56072502A JP 7250281 A JP7250281 A JP 7250281A JP S6335109 B2 JPS6335109 B2 JP S6335109B2
Authority
JP
Japan
Prior art keywords
film
polysilicon film
silicon
polysilicon
barrier diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56072502A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57187963A (en
Inventor
Masahiko Nakamae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56072502A priority Critical patent/JPS57187963A/ja
Publication of JPS57187963A publication Critical patent/JPS57187963A/ja
Publication of JPS6335109B2 publication Critical patent/JPS6335109B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617Combinations of vertical BJTs and only diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP56072502A 1981-05-14 1981-05-14 Manufacture of semiconductor device Granted JPS57187963A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56072502A JPS57187963A (en) 1981-05-14 1981-05-14 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56072502A JPS57187963A (en) 1981-05-14 1981-05-14 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57187963A JPS57187963A (en) 1982-11-18
JPS6335109B2 true JPS6335109B2 (enrdf_load_stackoverflow) 1988-07-13

Family

ID=13491171

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56072502A Granted JPS57187963A (en) 1981-05-14 1981-05-14 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57187963A (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59111375A (ja) * 1982-12-08 1984-06-27 エヌ・ベ−・フイリップス・フル−イランペンファブリケン 半導体デバイスおよびその製造方法
JPS59121872A (ja) * 1982-12-15 1984-07-14 Fujitsu Ltd 半導体装置
US4512076A (en) * 1982-12-20 1985-04-23 Raytheon Company Semiconductor device fabrication process
JPS63257269A (ja) * 1987-04-14 1988-10-25 Fujitsu Ltd 半導体装置のコンタクト形成方法
JP2793207B2 (ja) * 1988-11-04 1998-09-03 株式会社日立製作所 半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5177076A (en) * 1974-12-27 1976-07-03 Fujitsu Ltd Handotaisochinoseizohoho

Also Published As

Publication number Publication date
JPS57187963A (en) 1982-11-18

Similar Documents

Publication Publication Date Title
JPH0228902B2 (enrdf_load_stackoverflow)
US4412378A (en) Method for manufacturing semiconductor device utilizing selective masking, etching and oxidation
KR940009360B1 (ko) 반도체장치 및 그 제조방법
US4151631A (en) Method of manufacturing Si gate MOS integrated circuit
JP2890584B2 (ja) 半導体装置の製造方法
JPH0578173B2 (enrdf_load_stackoverflow)
JPH07142498A (ja) 半導体装置およびその製造方法
JPS6335109B2 (enrdf_load_stackoverflow)
JPH0513426A (ja) 半導体装置
JPH0581051B2 (enrdf_load_stackoverflow)
JPS6226573B2 (enrdf_load_stackoverflow)
JPH0127589B2 (enrdf_load_stackoverflow)
JPS6244819B2 (enrdf_load_stackoverflow)
JP2623575B2 (ja) バイポーラトランジスタの製造方法
JP2855684B2 (ja) 半導体装置の製造方法
JP3077146B2 (ja) 半導体装置の製造方法
JPS59124767A (ja) 半導体・集積回路装置の製造方法
JP2720567B2 (ja) 半導体装置の製造方法
JP3848782B2 (ja) 半導体装置の製造方法
JPH07109823B2 (ja) Mis型集積回路の製造方法
JPH0777263B2 (ja) 半導体装置の製造方法
JPS63107170A (ja) 半導体集積回路装置
JPH08264651A (ja) 半導体装置の製造方法
JPS6262458B2 (enrdf_load_stackoverflow)
JPS60195972A (ja) 半導体装置の製造方法