JPS6262458B2 - - Google Patents
Info
- Publication number
- JPS6262458B2 JPS6262458B2 JP57086049A JP8604982A JPS6262458B2 JP S6262458 B2 JPS6262458 B2 JP S6262458B2 JP 57086049 A JP57086049 A JP 57086049A JP 8604982 A JP8604982 A JP 8604982A JP S6262458 B2 JPS6262458 B2 JP S6262458B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- oxide film
- ion implantation
- protective oxide
- nitride film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 21
- 229910052796 boron Inorganic materials 0.000 claims description 20
- 238000005468 ion implantation Methods 0.000 claims description 20
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 17
- 150000004767 nitrides Chemical class 0.000 claims description 13
- 230000001681 protective effect Effects 0.000 claims description 13
- 239000012298 atmosphere Substances 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 229910052785 arsenic Inorganic materials 0.000 claims description 8
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 description 12
- 239000012535 impurity Substances 0.000 description 12
- 238000002513 implantation Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- -1 boron ions Chemical class 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57086049A JPS58201327A (ja) | 1982-05-19 | 1982-05-19 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57086049A JPS58201327A (ja) | 1982-05-19 | 1982-05-19 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58201327A JPS58201327A (ja) | 1983-11-24 |
| JPS6262458B2 true JPS6262458B2 (enrdf_load_stackoverflow) | 1987-12-26 |
Family
ID=13875822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57086049A Granted JPS58201327A (ja) | 1982-05-19 | 1982-05-19 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58201327A (enrdf_load_stackoverflow) |
-
1982
- 1982-05-19 JP JP57086049A patent/JPS58201327A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58201327A (ja) | 1983-11-24 |
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