JPS58201327A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS58201327A JPS58201327A JP57086049A JP8604982A JPS58201327A JP S58201327 A JPS58201327 A JP S58201327A JP 57086049 A JP57086049 A JP 57086049A JP 8604982 A JP8604982 A JP 8604982A JP S58201327 A JPS58201327 A JP S58201327A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- oxide film
- nitride film
- forming
- ion implantation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57086049A JPS58201327A (ja) | 1982-05-19 | 1982-05-19 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57086049A JPS58201327A (ja) | 1982-05-19 | 1982-05-19 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58201327A true JPS58201327A (ja) | 1983-11-24 |
| JPS6262458B2 JPS6262458B2 (enrdf_load_stackoverflow) | 1987-12-26 |
Family
ID=13875822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57086049A Granted JPS58201327A (ja) | 1982-05-19 | 1982-05-19 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58201327A (enrdf_load_stackoverflow) |
-
1982
- 1982-05-19 JP JP57086049A patent/JPS58201327A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6262458B2 (enrdf_load_stackoverflow) | 1987-12-26 |
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