JPS6331946B2 - - Google Patents

Info

Publication number
JPS6331946B2
JPS6331946B2 JP54044637A JP4463779A JPS6331946B2 JP S6331946 B2 JPS6331946 B2 JP S6331946B2 JP 54044637 A JP54044637 A JP 54044637A JP 4463779 A JP4463779 A JP 4463779A JP S6331946 B2 JPS6331946 B2 JP S6331946B2
Authority
JP
Japan
Prior art keywords
groove
semiconductor substrate
main surface
semiconductor
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54044637A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55138261A (en
Inventor
Hisashi Haneda
Tetsuo Ichikawa
Juki Shimada
Hideyoshi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical Nippon Telegraph and Telephone Corp
Priority to JP4463779A priority Critical patent/JPS55138261A/ja
Publication of JPS55138261A publication Critical patent/JPS55138261A/ja
Publication of JPS6331946B2 publication Critical patent/JPS6331946B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP4463779A 1979-04-12 1979-04-12 Semiconductor device Granted JPS55138261A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4463779A JPS55138261A (en) 1979-04-12 1979-04-12 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4463779A JPS55138261A (en) 1979-04-12 1979-04-12 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55138261A JPS55138261A (en) 1980-10-28
JPS6331946B2 true JPS6331946B2 (enrdf_load_stackoverflow) 1988-06-27

Family

ID=12696935

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4463779A Granted JPS55138261A (en) 1979-04-12 1979-04-12 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55138261A (enrdf_load_stackoverflow)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5139792B2 (enrdf_load_stackoverflow) * 1972-06-19 1976-10-29
US3924265A (en) * 1973-08-29 1975-12-02 American Micro Syst Low capacitance V groove MOS NOR gate and method of manufacture
JPS535488U (enrdf_load_stackoverflow) * 1976-07-01 1978-01-18
JPS5923115B2 (ja) * 1976-10-08 1984-05-30 株式会社東芝 メサ型半導体装置
JPS5515204A (en) * 1978-07-19 1980-02-02 Toshiba Corp Manufacturing method for contact type semiconductor device

Also Published As

Publication number Publication date
JPS55138261A (en) 1980-10-28

Similar Documents

Publication Publication Date Title
US5429993A (en) Semiconductor accelerometer and method of its manufacture
US3766438A (en) Planar dielectric isolated integrated circuits
EP0288052A3 (en) Semiconductor device comprising a substrate, and production method thereof
JPH02206175A (ja) Ｍｏｓ型半導体装置
US3631307A (en) Semiconductor structures having improved high-frequency response and power dissipation capabilities
JPS6331946B2 (enrdf_load_stackoverflow)
JPS59113669A (ja) 半導体素子
US4903099A (en) Field effect transistor for use as ion sensor
JPS6231138A (ja) 誘電体分離半導体集積回路装置
JPS5838939B2 (ja) 集積回路
JPH023303B2 (enrdf_load_stackoverflow)
JPS6337510B2 (enrdf_load_stackoverflow)
JPH01114042A (ja) 半導体装置の製造方法
JP3111489B2 (ja) 傾斜面を有する絶縁膜の形成方法
JPH0377362A (ja) 半導体装置及びその製造方法
JPS63307775A (ja) キャパシタおよびその製造方法
KR910000277B1 (ko) 반도체 장치의 제조방법
JPH01235246A (ja) 半導体装置
JPS5856472A (ja) 半導体装置の製造方法
JPS6285441A (ja) 半導体装置の製造方法
JPH02153551A (ja) 半導体装置の製造方法
JPS5775452A (en) Mos capacitor in semiconductor integrated circuit and manufacture thereof
JPH0227753A (ja) 半導体装置
KR960015738A (ko) 반도체소자 및 그 제조방법
JPS6410649A (en) Manufacture of semiconductor device