JPS6410649A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6410649A JPS6410649A JP16631587A JP16631587A JPS6410649A JP S6410649 A JPS6410649 A JP S6410649A JP 16631587 A JP16631587 A JP 16631587A JP 16631587 A JP16631587 A JP 16631587A JP S6410649 A JPS6410649 A JP S6410649A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- wiring layer
- wall
- contact hole
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To make a contact hole in the manner of self alignment, and realize a fine structure, by forming an aperture part reaching a second specified region of a main surface in the vicinity of a first wiring layer by an etching method with anisotropy, and forming via the aperture part a second wiring layer extending on an insulating layer. CONSTITUTION:An impurity diffusion region 15 and a third insulating film 16 covering the side surfaces of a second insulating film 14 and a first wiring layer 13 are formed. When a contact hole is made in the third insulating film 16, a part of the third insulating film which is so called a side-wall is left on the side-walls of the first wiring layer 13 and the second insulating layer 14. This side-wall is inevitably formed on a vertical side-wall in the case of an etching such as RIE. Therefore, the first wiring layer is always protected by an insulating film (a part of the third insulating film), even if the contact hole is formed under the condition where the margin of mask alignment is zero. A second wiring layer is formed so as to come into electrical contact with the impurity diffusion region 15.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16631587A JPS6410649A (en) | 1987-07-02 | 1987-07-02 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16631587A JPS6410649A (en) | 1987-07-02 | 1987-07-02 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6410649A true JPS6410649A (en) | 1989-01-13 |
Family
ID=15829070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16631587A Pending JPS6410649A (en) | 1987-07-02 | 1987-07-02 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6410649A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100265828B1 (en) * | 1997-06-30 | 2000-09-15 | 김영환 | A method for fabricating semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61174742A (en) * | 1985-01-30 | 1986-08-06 | Toshiba Corp | Manufacture of semiconductor device |
| JPS6240765A (en) * | 1985-08-15 | 1987-02-21 | Toshiba Corp | Read-only semiconductor memory and manufacture thereof |
-
1987
- 1987-07-02 JP JP16631587A patent/JPS6410649A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61174742A (en) * | 1985-01-30 | 1986-08-06 | Toshiba Corp | Manufacture of semiconductor device |
| JPS6240765A (en) * | 1985-08-15 | 1987-02-21 | Toshiba Corp | Read-only semiconductor memory and manufacture thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100265828B1 (en) * | 1997-06-30 | 2000-09-15 | 김영환 | A method for fabricating semiconductor device |
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