JPS6424453A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6424453A JPS6424453A JP62180546A JP18054687A JPS6424453A JP S6424453 A JPS6424453 A JP S6424453A JP 62180546 A JP62180546 A JP 62180546A JP 18054687 A JP18054687 A JP 18054687A JP S6424453 A JPS6424453 A JP S6424453A
- Authority
- JP
- Japan
- Prior art keywords
- regions
- grooves
- film
- capacitors
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To form grooves into a form suitable for the formation of trench capacitors and to contrive the stabilization of characteristics of the capacitors by a method wherein the grooves of capacitors are formed by isotropic etching using insulating regions as masks. CONSTITUTION:Insulating regions 2a for interelement isolation are formed in an Si semiconductor substrate 1. The parts, which surround capacitor forming regions 1a, of the regions 2a are formed in a trench structure. After a resist mask 6a, which exposes the regions 1a with a mask alignment margin in the regions 2a, is formed, grooves 11 are each formed in the regions 1a by isotropic etching. The inner side surfaces of the regions 2a are exposed on the side surfaces of the grooves 11, the bottom surfaces of the grooves are rounded and there exists no angularity and protrusion on the inner surfaces of the grooves. The mask 6a is removed and after an Si dioxide insulating film 12 is formed on the bottom surfaces of the grooves 11, a poly Si film is deposited on the whole surface and an impurity having a conductivity type opposite to that of the substrate 1 is diffused in this film to form a polychristalline Si conducting film 13. The film 13 is used as the electrode of one of trench capacitors, which are formed thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62180546A JPS6424453A (en) | 1987-07-20 | 1987-07-20 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62180546A JPS6424453A (en) | 1987-07-20 | 1987-07-20 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6424453A true JPS6424453A (en) | 1989-01-26 |
Family
ID=16085169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62180546A Pending JPS6424453A (en) | 1987-07-20 | 1987-07-20 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6424453A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6476435B1 (en) * | 1997-09-30 | 2002-11-05 | Micron Technology, Inc. | Self-aligned recessed container cell capacitor |
| WO2021020322A1 (en) * | 2019-07-30 | 2021-02-04 | 太陽誘電株式会社 | Trench capacitor |
-
1987
- 1987-07-20 JP JP62180546A patent/JPS6424453A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6476435B1 (en) * | 1997-09-30 | 2002-11-05 | Micron Technology, Inc. | Self-aligned recessed container cell capacitor |
| US6818501B2 (en) | 1997-09-30 | 2004-11-16 | Micron Technology, Inc. | Method of making a self-aligned recessed container cell capacitor |
| WO2021020322A1 (en) * | 2019-07-30 | 2021-02-04 | 太陽誘電株式会社 | Trench capacitor |
| JP2021022692A (en) * | 2019-07-30 | 2021-02-18 | 太陽誘電株式会社 | Trench capacitor |
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