JPS63277596A - 炭化珪素単結晶の成長方法 - Google Patents
炭化珪素単結晶の成長方法Info
- Publication number
- JPS63277596A JPS63277596A JP11315387A JP11315387A JPS63277596A JP S63277596 A JPS63277596 A JP S63277596A JP 11315387 A JP11315387 A JP 11315387A JP 11315387 A JP11315387 A JP 11315387A JP S63277596 A JPS63277596 A JP S63277596A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- silicon carbide
- growth
- crystal
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11315387A JPS63277596A (ja) | 1987-05-07 | 1987-05-07 | 炭化珪素単結晶の成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11315387A JPS63277596A (ja) | 1987-05-07 | 1987-05-07 | 炭化珪素単結晶の成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63277596A true JPS63277596A (ja) | 1988-11-15 |
| JPH0443879B2 JPH0443879B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-07-17 |
Family
ID=14604910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11315387A Granted JPS63277596A (ja) | 1987-05-07 | 1987-05-07 | 炭化珪素単結晶の成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63277596A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2854641A1 (fr) * | 2003-05-05 | 2004-11-12 | Centre Nat Rech Scient | Procede de formation d'une couche de carbure de silicium sur une tranche de silicium |
| WO2011155234A1 (ja) * | 2010-06-09 | 2011-12-15 | 住友電気工業株式会社 | 炭化珪素基板、エピタキシャル層付き基板、半導体装置および炭化珪素基板の製造方法 |
| CN102869816A (zh) * | 2011-03-22 | 2013-01-09 | 住友电气工业株式会社 | 碳化硅衬底 |
| CN105442038A (zh) * | 2015-12-17 | 2016-03-30 | 中国电子科技集团公司第二研究所 | 一种坩埚旋转式碳化硅单晶生长方法 |
-
1987
- 1987-05-07 JP JP11315387A patent/JPS63277596A/ja active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2854641A1 (fr) * | 2003-05-05 | 2004-11-12 | Centre Nat Rech Scient | Procede de formation d'une couche de carbure de silicium sur une tranche de silicium |
| WO2004099471A3 (fr) * | 2003-05-05 | 2005-01-20 | Centre Nat Recherche | Procede de formation d’une couche de carbure de silicium sur une tranche de silicium |
| US7416606B2 (en) | 2003-05-05 | 2008-08-26 | Centre National De La Recherche Scientifique | Method of forming a layer of silicon carbide on a silicon wafer |
| WO2011155234A1 (ja) * | 2010-06-09 | 2011-12-15 | 住友電気工業株式会社 | 炭化珪素基板、エピタキシャル層付き基板、半導体装置および炭化珪素基板の製造方法 |
| CN102473604A (zh) * | 2010-06-09 | 2012-05-23 | 住友电气工业株式会社 | 碳化硅衬底、设置有外延层的衬底、半导体器件和用于制造碳化硅衬底的方法 |
| CN102869816A (zh) * | 2011-03-22 | 2013-01-09 | 住友电气工业株式会社 | 碳化硅衬底 |
| CN105442038A (zh) * | 2015-12-17 | 2016-03-30 | 中国电子科技集团公司第二研究所 | 一种坩埚旋转式碳化硅单晶生长方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0443879B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-07-17 |