JPS63277549A - 超伝導セラミックスペ−スト組成物 - Google Patents

超伝導セラミックスペ−スト組成物

Info

Publication number
JPS63277549A
JPS63277549A JP62110718A JP11071887A JPS63277549A JP S63277549 A JPS63277549 A JP S63277549A JP 62110718 A JP62110718 A JP 62110718A JP 11071887 A JP11071887 A JP 11071887A JP S63277549 A JPS63277549 A JP S63277549A
Authority
JP
Japan
Prior art keywords
weight
parts
volatile solvent
ceramic
superconductive ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62110718A
Other languages
English (en)
Inventor
Hirozo Yokoyama
横山　博三
Hitoshi Suzuki
均 鈴木
Nobuo Kamehara
亀原　伸男
Koichi Niwa
丹羽　紘一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62110718A priority Critical patent/JPS63277549A/ja
Priority to DE3853316T priority patent/DE3853316T2/de
Priority to EP88304129A priority patent/EP0290271B1/en
Priority to CN88102627A priority patent/CN1040937C/zh
Publication of JPS63277549A publication Critical patent/JPS63277549A/ja
Priority to US07/268,195 priority patent/US5081070A/en
Priority to CN91101166A priority patent/CN1059349A/zh
Priority to US08/064,668 priority patent/US5286713A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/45—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
    • C04B35/4504—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides containing rare earth oxides
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/45—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
    • C04B35/4512—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides containing thallium oxide
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    • C04B35/4521—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides containing bismuth oxide
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    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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    • H01L23/49888—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing superconducting material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming superconductor layers
    • H10N60/0352—Processes for depositing or forming superconductor layers from a suspension or slurry, e.g. screen printing; doctor blade casting
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    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/48—Organic compounds becoming part of a ceramic after heat treatment, e.g. carbonising phenol resins
    • C04B2235/483—Si-containing organic compounds, e.g. silicone resins, (poly)silanes, (poly)siloxanes or (poly)silazanes
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
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Description

【発明の詳細な説明】 〔概　要〕 超伝導セラミックス成分粉末１００重量部に対して、有
機成分が、結合剤０．５〜１０重量部、難揮発性溶剤５
〜３０重量部および揮発性溶剤１０〜３０重量部の他に
、ＴｉまたはＳｉを含むカップリング剤０．１〜１０重
量部を含む超伝導セラミックスペースト組成物。
〔産業上の利用分野〕
本発明は高速電算機用多層回路基板の導体層の形成に使
用することができる超伝導セラミックスペースト組成物
に関する。
〔従来の技術〕
高速電算機用回路基板は信号を効率よく伝送するために
、絶縁材料は誘電率が低いこと、導体材料は電気抵抗が
低いことが要求される。従来は導体材料を銅とする多層
セラミック回路基板が使用されていた。
近年、酸化物超伝導材料が注目されるようになり、たと
えば、Ｌａ　−Ｂａ　−Ｃｕ−０系、Ｌａ　−３ｒ　−
Ｃｕ−０系、Ｙ−Ｂａ−Ｃｕ−０系などが研究されてい
る。
このような酸化物を導体材料として、回路基板を作製す
るのに、ガラス−セラミックスグリーンシート上に超伝
導セラミックスペーストをスクリーン印刷し、これを積
層して焼成する方法が考えられている。
〔発明が解決しようとする問題点〕
ガラスーセラミックスグリーンシート上に超伝導セラミ
ックスペーストをスクリーン印刷したものは相互のぬれ
性が悪いので、積層して焼成した回路基板はガラス−セ
ラミックス層と超伝導セラミックス層との密着性が弱い
。
〔問題点を解決するための手段〕
上記問題点は、超伝導セラミックス成分粉末と有機成分
とを含む超伝導セラミックスペースト組成物であって、
超伝導セラミックス成分粉末１００重量部に対して、有
機成分が、結合剤０．５〜１０重量部、難揮発性溶剤５
〜３０重量部および揮発性溶剤１０〜３０重量部の他に
、ＴｉまたはＳｉを含むカップリング剤００１〜１０重
量部を含むことを特徴とする組成物によって解決するこ
とができる。
〔作　用〕
カップリング剤が無機質粉末と有機質結合剤との間のぬ
れ性を向上することは周知の技術である。
発明者は、ＴｉまたはＳｉを含むカップリング剤の適量
を含む超伝導セラミックスペーストを、ガラス−セラミ
ックスグリーンシートにスクリーン印刷すると、ペース
トとグリーンシートとの間のぬれ性が向上するので、積
層し、焼成した多層回路基板の導電層と絶縁層との間の
密着性を高めるばかりでなく、導電層の超伝導性を少な
くとも阻害しないことを見出した。
超伝導セラミックス成分粉末１００重量部に対する添加
量は、カップリング剤が０．１重量部未満では密着強度
の向上に効果がなく、１０重量部を超えると粘度が著し
く高くなって過剰な溶剤が必要となり、スクリーン印刷
後の形状保持が困難とな゛る。また、この範囲を外れる
と、得られた超伝導ペーストをスクリーン印刷して焼成
した回路基板の歩留りが低下する。結合剤が０．５重・
量％未満ではセラミック成分粉末を十分に結合できず、
１０重量％を超えると乾燥後の形状保持が困難となり、
難揮発性溶剤が５重量部未満ではペースト粘度が高くな
り印刷が困難となり、３０重量部より多いと粘度が低く
すぎて印刷が困難となる。揮発性溶剤が１０重量部未満
ではセラミックス粉末を均一に分散させることが困難で
あり、３０重量部を超えると、ペースト作製１（で時間
がかかる。
超伝導セラミックス成分は、焼成後に、一般式１式％ （式中、Ａは周期律表第１１ａ族のＢａ、Ｃａ、Ｓｒお
よびＭｇから選択された少なくとも１つのアルカリ土類
元素、Ｒは周期律表第ｍｂ族のＳｃ＋Ｙ。
Ｌａ、　Ｃｅ、　Ｐｒ＋　Ｎｄ、　Ｓｓ、　Ｅｕ＋　Ｇ
ｄ＋　Ｔｂ＋　Ｄｙ、　Ｈｏ＋　Ｅｒ。
Ｔｍ、ＹｂおよびＬｕから選択された少なくとも１つの
希土類元素、Ｍが周期律表第１ｂ族のＣｕ。
Ａｇ、およびＡｕから選択された少なくとも１つの銅族
元素を表わし、０が酸素である）で示されるセラミック
スを形成する酸化物または酸素酸塩が好ましい。
〔実施例〕
実施土工 超伝導セラミックス成分粉末として、粒径１趨のＢａＣ
Ｏ５Ｏ，６モルと、粒径１趨のＹｚｏ、　０．４モルと
、粒径２趨のＣｕ０１モルとをボールミルで４８時間混
合した。この混合粉末１００重量部に、結合剤ポリメチ
ルメタクリレート樹脂３重量部、難揮発性溶剤テルピネ
オール２０部、Ｔｉを含むカンプリング剤（味の素製、
ＫＲ−ＱＳ）　５重量部および揮発性溶剤メチルエチル
ケトン２０重量部を添加して、ボールミルで７２時間混
合した。この混合物をめのう乳鉢で１．５時間混練し、
さらに三本ロールミルで３０回混練して超伝導セラミッ
クスペースト組成物を作製した。
はうけい酸ガラス５０重量部とアルミナ５０重量部とを
含む厚み０．２鶴のガラス−セラミックスグリーンシー
トをポリエステルフィルム上に成形し、２４時間自然乾
燥させた後、直径０．１　ｓｎのスルーホールを明け、
さきに作製した超伝導セラミックスペーストを充填し、
８０℃で２０分間乾燥した。このペーストを充填したグ
リーンシートに、さらにペーストをスクリーン印刷して
導体パターンを形成し、このグリーンシート１０枚を重
ねて３００　ｋｇ　／　ｃｏｄに加圧し１３０℃で積層
した。これを８７０℃で４時間予備焼成した後、１０２
０℃で４時間本焼成して多層セラミックス回路基板を作
製した。
この基板を液体窒素に浸漬して、導体層の電気抵抗を測
定した結果、ゼロを示した。
また、−面にペーストを付着させて焼成した基板の部分
を１５Ｘ１５ｍに切断し、導体層をはさむ絶縁層の外面
に治具を接着して、引張り試験を行なったところ、導体
層と絶縁層との密着力は３ｋｇ／ｆ１２以上であった。
皇施握主 Ｔｉを含むカップリング剤の代りに、Ｓｉを含むカンプ
リング剤（日本ユニカ製Ａ　−１８７）　５重量部を添
加したことの他は、実施例１と同様にして多層セラミッ
クス回路基板を作製した。この基板の導体層の電気抵抗
、および導体層と絶縁層との間の密着力は実施例１と同
様の値を示した。
止較侃 カップリング剤を使用しないことの他は、実施例１と同
様にして多層セラミックス回路基板を作製した。この基
板の導体層と絶縁層との間の密着力は０．１眩／１１２
であった。
〔発明の効果〕
超伝導セラミックスペーストにＴｉまたはＳｉを含むカ
ップリング剤の適量を添加することによって、導体層の
超伝導性を少なくとも損なうことなく、導体層と絶縁層
との間の密着力の大きい超伝導セラミックス回路基板を
製造することができる。

Claims (1)

  1. 【特許請求の範囲】 １、超伝導セラミックス成分粉末と有機成分とを含む超
    伝導セラミックスペースト組成物であって、 超伝導セラミックス成分粉末１００重量部に対して、有
    機成分が、結合剤０．５〜１０重量部、難揮発性溶剤５
    〜３０重量部および揮発性溶剤１０〜３０重量部の他に
    、ＴｉまたはＳｉを含むカップリング剤０．１〜１０重
    量部を含むことを特徴とする組成物。 ２、超伝導セラミックス成分が、焼成後に、一般式 Ａ＿０＿．＿５＿〜＿１＿．＿８Ｒ＿０＿．＿２＿〜＿
    ２ＭＯ＿２＿〜＿５（式中、Ａは周期律表第IIａ族のＢ
    ａ、Ｃａ、ＳｒおよびＭｇから選択された少なくとも１
    つのアルカリ土類元素、Ｒは周期律表第IIIｂ族のＳｃ
    、Ｙ、Ｌａ、Ｃｅ、Ｐｒ、Ｎｄ、Ｓｍ、Ｅｕ、Ｇｄ、Ｔ
    ｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、ＹｂおよびＬｕから選択
    された少なくとも１つの希土類元素、Ｍが周期律表第
    I ｂ族のＣｕ、Ａｇ、およびＡｕから選択された少なく
    とも１つの銅族元素を表わし、Ｏが酸素である）で示さ
    れるセラミックスを形成する酸化物または酸素酸塩であ
    る、特許請求の範囲第１項記載の組成物。
JP62110718A 1987-05-08 1987-05-08 超伝導セラミックスペ−スト組成物 Pending JPS63277549A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP62110718A JPS63277549A (ja) 1987-05-08 1987-05-08 超伝導セラミックスペ−スト組成物
DE3853316T DE3853316T2 (de) 1987-05-08 1988-05-06 Supraleitende Schaltungskarte und Verfahren zu ihrer Herstellung.
EP88304129A EP0290271B1 (en) 1987-05-08 1988-05-06 Superconducting circuit board and process of manufacturing it
CN88102627A CN1040937C (zh) 1987-05-08 1988-05-07 超导电路板
US07/268,195 US5081070A (en) 1987-05-08 1989-01-30 Superconducting circuit board and paste adopted therefor
CN91101166A CN1059349A (zh) 1987-05-08 1991-02-23 一种用于形成超导陶瓷薄膜的涂料
US08/064,668 US5286713A (en) 1987-05-08 1993-05-21 Method for manufacturing an oxide superconducting circuit board by printing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62110718A JPS63277549A (ja) 1987-05-08 1987-05-08 超伝導セラミックスペ−スト組成物

Publications (1)

Publication Number Publication Date
JPS63277549A true JPS63277549A (ja) 1988-11-15

Family

ID=14542724

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62110718A Pending JPS63277549A (ja) 1987-05-08 1987-05-08 超伝導セラミックスペ−スト組成物

Country Status (2)

Country Link
US (1) US5081070A (ja)
JP (1) JPS63277549A (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63277514A (ja) * 1987-05-08 1988-11-15 Koujiyundo Kagaku Kenkyusho:Kk 酸化物超電導体材料
CN117069482A (zh) * 2023-08-15 2023-11-17 湖南省新化县恒生电子陶瓷有限责任公司 一种新能源汽车熔断器用氧化铝陶瓷及其制备方法

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CA2054796C (en) * 1990-11-01 1999-01-19 Hiroshi Inada Superconducting wiring lines and process for fabricating the same
JP3223199B2 (ja) * 1991-10-25 2001-10-29 ティーディーケイ株式会社 多層セラミック部品の製造方法および多層セラミック部品
JP3338527B2 (ja) * 1992-10-07 2002-10-28 富士通株式会社 高密度積層形のコネクタ、及び、コネクタの設計方法
JP3087152B2 (ja) * 1993-09-08 2000-09-11 富士通株式会社 樹脂フィルム多層回路基板の製造方法
US8238696B2 (en) 2003-08-21 2012-08-07 Microsoft Corporation Systems and methods for the implementation of a digital images schema for organizing units of information manageable by a hardware/software interface system
US7401104B2 (en) * 2003-08-21 2008-07-15 Microsoft Corporation Systems and methods for synchronizing computer systems through an intermediary file system share or device
US8166101B2 (en) * 2003-08-21 2012-04-24 Microsoft Corporation Systems and methods for the implementation of a synchronization schemas for units of information manageable by a hardware/software interface system
US7778962B2 (en) * 2004-04-30 2010-08-17 Microsoft Corporation Client store synchronization through intermediary store change packets
JP5208349B2 (ja) * 2004-09-03 2013-06-12 富士通株式会社 容量素子とその製造方法
US8315678B2 (en) * 2007-10-10 2012-11-20 D-Wave Systems Inc. Systems, methods, and apparatus for multilayer superconducting printed circuit boards
CN102822112B (zh) * 2010-03-30 2014-06-18 株式会社村田制作所 金属基基板及其制造方法

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US4835039A (en) * 1986-11-26 1989-05-30 Ceramics Process Systems Corporation Tungsten paste for co-sintering with pure alumina and method for producing same
CA1329952C (en) * 1987-04-27 1994-05-31 Yoshihiko Imanaka Multi-layer superconducting circuit substrate and process for manufacturing same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63277514A (ja) * 1987-05-08 1988-11-15 Koujiyundo Kagaku Kenkyusho:Kk 酸化物超電導体材料
CN117069482A (zh) * 2023-08-15 2023-11-17 湖南省新化县恒生电子陶瓷有限责任公司 一种新能源汽车熔断器用氧化铝陶瓷及其制备方法
CN117069482B (zh) * 2023-08-15 2024-02-02 湖南省新化县恒生电子陶瓷有限责任公司 一种新能源汽车熔断器用氧化铝陶瓷及其制备方法

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